Datasheet > MMBD7000-G

MMBD7000-G

更新时间： 2024-09-25 01:24:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	92K
描述
Silicon epitaxial planar diode

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中文翻译

获取价格

数据手册

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MMBD7000-G 数据手册

MMBD7000-G

Vishay Semiconductors

www.vishay.com

Small Signal Switching Diode, Dual

FEATURES

• Silicon epitaxial planar diode

• Fast switching dual diode, especially suited for

automatic insertion

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912



MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.1 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

MMBD7000-G3-08 or MMBD7000-G3-18

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

MMBD7000-G

Dual diodes serial

M5G

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

100

200

500

225

1.8

UNIT

Reverse voltage

V_R

Forward current (continuous)

Non-repetitive peak forward current

I_F

t = 1 s

I_FSM

P_tot

mW/K

Power dissipation on FR-5 board

Derate above 25 °C

P_tot

300

2.4

Total device dissipation on alumina substrate

P_tot

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

417

UNIT

K/W

°C

(1)

R_thJA

Typical thermal resistance, junction to ambient air

(2)

R_thJA

556

Maximum junction temperature

Storage temperature range

Operating temperature range

T_j

150

T_stg

T_op

- 55 to + 150

°C

Notes

(1)

Device on alumina substrate

On FR-5 board

(2)

Rev. 1.2, 15-May-13

Document Number: 85873

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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