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MMBD7000LT1G PDF预览

MMBD7000LT1G

更新时间: 2024-11-18 04:39:31
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关光电二极管PC
页数 文件大小 规格书
4页 49K
描述
Dual Switching Diode

MMBD7000LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.5
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:225745Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-08-13 08:13:23
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD7000LT1G 数据手册

 浏览型号MMBD7000LT1G的Datasheet PDF文件第2页浏览型号MMBD7000LT1G的Datasheet PDF文件第3页浏览型号MMBD7000LT1G的Datasheet PDF文件第4页 
MMBD7000LT1  
Preferred Device  
Dual Switching Diode  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
1
2
MAXIMUM RATINGS (EACH DIODE)  
ANODE  
CATHODE  
3
Rating  
Reverse Voltage  
Symbol  
Value  
100  
Unit  
Vdc  
CATHODE/ANODE  
V
R
Forward Current  
I
200  
mAdc  
mAdc  
F
Peak Forward Surge Current  
I
500  
FM(surge)  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SOT−23 (TO−236AB)  
CASE 318−08  
STYLE 8  
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation FR5 Board  
P
D
225  
mW  
(Note 1)T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance, Junction to  
Ambient  
R
556  
q
JA  
M5C M  
1
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate, (Note 2)  
T = 25°C  
Derate above 25°C  
A
M5C  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
q
JA  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBD7000LT1  
MMBD7000LT1G  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
SOT−23  
(Pb−Free)  
MMBD7000LT3  
SOT−23 10,000 Tape & Reel  
MMBD7000LT3G  
SOT−23 10,000 Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 3  
MMBD7000LT1/D  
 

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