Datasheet > MMBD7000LT1

MMBD7000LT1

更新时间： 2024-11-12 07:17:11

品牌	Logo	应用领域
威伦 - WILLAS		二极管开关
页数	文件大小	规格书
3页	299K
描述
Dual Switching Diode

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数据手册

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MMBD7000LT1 数据手册

WILLAS

Pb Free Product

Dual Switching Diode

MMBD7000LT1

CATHODE

ANODE

CATHODE/ANODE

CASE 318–08, STYLE11

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Value

100

Unit

Vdc

Reverse Voltage

Forward Current

I _F

200

mAdc

Peak Forward Surge Current

I_FM(surge)

500

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board ⁽¹⁾

225

T _A= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _{θ JA}

Alumina Substrate, ⁽²⁾T _A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _{θ JA}

T _J, T _stg

–55 to +150

DEVICEMARKING

MMBD7000LT1 = M5C

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)(EACH DIODE)

Characteristic

OFFCHARACTERISTICS

Reverse Breakdown Voltage

(I _(BR)= 100 µAdc)

Symbol

Min

Max

Unit

V _(BR)

100

—

Vdc

Reverse Voltage Leakage Current

(V _R= 50 Vdc)

µAdc

I_R

I_R2

I_R3

V _F

—

1.0

3.0

100

(V _R= 100 Vdc)

(V _R= 50 Vdc,125°C)

Forward Voltage

Vdc

(I _F= 1.0 mAdc)

0.55

0.67

0.75

0.7

0.82

1.1

(I _F= 10 mAdc)

(I _F= 100 mAdc)

Reverse Recovery Time

(I _F= I _R= 10 mAdc) (Figure 1)

Capacitance(V_R=0V)

t_rr

—

4.0

—

1.5

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

12 3

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