MMBD7000HS PDF预览

MMBD7000HS

更新时间: 2025-07-25 10:52:47
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
4页 78K
描述
DUAL SURFACE MOUNT SWITCHING DIODE

MMBD7000HS 数据手册

 浏览型号MMBD7000HS的Datasheet PDF文件第2页浏览型号MMBD7000HS的Datasheet PDF文件第3页浏览型号MMBD7000HS的Datasheet PDF文件第4页 
MMBD7000HS /HC  
DUAL SURFACE MOUNT SWITCHING DIODE  
Features  
Mechanical Data  
Fast Switching Speed  
Case: SOT-23  
Surface Mount Package Ideally Suited for Automated Insertion  
For General Purpose Switching Applications  
High Conductance  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)  
"Green" Device (Note 4)  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Polarity: See Diagram  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.008 grams (approximate)  
SOT-23  
TOP VIEW  
MMBD7000HS  
MMBD7000HC  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
RMS Reverse Voltage  
71  
V
VR(RMS)  
IFM  
Forward Continuous Current (Note 1)  
300  
mA  
2.0  
1.0  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0μs  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
350  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
357  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
TJ , TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 2)  
100  
V
V(BR)R  
IR = 100μA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
VR = 50V  
0.55  
0.67  
0.75  
0.70  
0.82  
1.10  
1.25  
Forward Voltage  
V
VF  
μA  
μA  
μA  
nA  
1.0  
3.0  
100  
25  
VR = 100V  
Reverse Current (Note 2)  
IR  
V
R = 50V, TJ = 125°C  
VR = 20V  
Total Capacitance  
2.0  
4.0  
pF  
CT  
trr  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
ns  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.  
1 of 4  
www.diodes.com  
April 2010  
© Diodes Incorporated  
MMBD7000HS /HC  
Document number: DS31782 Rev. 4 - 2  

与MMBD7000HS相关器件

型号 品牌 获取价格 描述 数据表
MMBD7000HS-7-F DIODES

获取价格

DUAL SURFACE MOUNT SWITCHING DIODE
MMBD7000LT-1 ONSEMI

获取价格

Dual Switching Diode
MMBD7000LT-1 INFINEON

获取价格

Silicon Switching Diode Array
MMBD7000LT1 MOTOROLA

获取价格

Dual Switching Diode
MMBD7000LT1 ONSEMI

获取价格

Dual Switching Diode
MMBD7000LT1 LRC

获取价格

Dual Switching Diode
MMBD7000LT1 WILLAS

获取价格

Dual Switching Diode
MMBD7000LT1 WINNERJOIN

获取价格

Surface mount switching diode
MMBD7000LT1G ONSEMI

获取价格

Dual Switching Diode
MMBD7000LT1G_09 ONSEMI

获取价格

Dual Switching Diode These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS