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MJE13009

更新时间： 2024-11-11 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 453K
描述
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

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中文翻译

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MJE13009 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.06Is Samacsys：N
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：12 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
功耗环境最大值：100 W认证状态：Not Qualified
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHz最大关闭时间（toff）：3700 ns
最大开启时间（吨）：1100 nsVCEsat-Max：3 V
Base Number Matches：1

MJE13009 数据手册

 浏览型号MJE13009的Datasheet PDF文件第2页浏览型号MJE13009的Datasheet PDF文件第3页浏览型号MJE13009的Datasheet PDF文件第4页浏览型号MJE13009的Datasheet PDF文件第5页浏览型号MJE13009的Datasheet PDF文件第6页浏览型号MJE13009的Datasheet PDF文件第7页 
Order this document  
by MJE13009/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
12 AMPERE  
NPN SILICON  
POWER TRANSISTOR  
400 VOLTS  
The MJE13009 is designed for high–voltage, high–speed power switching inductive  
circuits where fall time is critical. They are particularly suited for 115 and 220 V  
switchmode applications such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
100 WATTS  
SPECIFICATION FEATURES:  
•
•
•
V
400 V and 300 V  
CEO(sus)  
Reverse Bias SOA with Inductive Loads @ T = 100 C  
Inductive Switching Matrix 3 to 12 Amp, 25 and 100 C  
C
. . . t @ 8 A, 100 C is 120 ns (Typ).  
c
•
•
700 V Blocking Capability  
SOA and Switching Applications Information.  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
400  
700  
9
CEO(sus)  
V
CEV  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
12  
24  
I
I
I
CM  
Base Current — Continuous  
— Peak (1)  
I
B
6
12  
Adc  
Adc  
BM  
Emitter Current — Continuous  
— Peak (1)  
I
E
18  
36  
EM  
Total Power Dissipation @ T = 25 C  
A
P
D
P
D
2
16  
Watts  
mW/ C  
Derate above 25 C  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
100  
800  
Watts  
mW/ C  
Operating and Storage Junction Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
1.25  
275  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
θJC  
Maximum Lead Temperature for Soldering Purposes:  
1/8″ from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 2  
Motorola, Inc. 1995  
1234567...10

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MJE1300916 MOTOROLA

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 		Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
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 		Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
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MJE13009AF MOTOROLA

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 		Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
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 		12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009C MOTOROLA

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