MJE13009

更新时间： 2024-11-12 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
5页	80K
描述
Silicon NPN Power Transistors

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中文翻译

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MJE13009 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE13009

DESCRIPTION

·With TO-220C package

·High voltage ,high speed

APPLICATIONS

·Particularly suited for 115V and 220V

switchmode applications such as switching

regulators,inverters ,motor controls,solenoid/

relay drivers and deflection circuits

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Emitter current

CONDITIONS

Open emitter

VALUE

700

400

UNIT

Open base

Open collector

I_CM

I_E

I_EM

Emitter current-Peak

Base current

I_B

I_BM

Base current-Peak

T_a=25℃

T_C=25℃

P_D

Total power dissipation

100

150

-65~150

T_j

Junction temperature

Storage temperature

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to case

VALUE

UNIT

R_{th j-C}

1.25

℃/W

12 3 4 5

中文翻译

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与MJE13009相关器件

型号	品牌	获取价格	描述	数据表
MJE13009_06	ONSEMI	获取价格	12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
MJE13009_12	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE13009_15	UTC	获取价格	SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
MJE1300916	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE1300916A	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009A	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009A	NJSEMI	获取价格	Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220
MJE13009AF	MOTOROLA	获取价格	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
MJE13009AJ	MOTOROLA	获取价格	12A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13009C	MOTOROLA	获取价格	暂无描述