Datasheet > MJE13009

MJE13009

更新时间： 2024-11-12 10:55:47

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描述
SWITCHMODE Series NPN Silicon Power Transistors

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MJE13009 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

MJE13009

SWITCHMODE Series NPN Silicon Power Transistors

DESCRIPTION

These devices are designed for high–voltage, high–speed power switching inductive circuits

where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such

as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and

Deflection circuits.

ABSOLUTE MAXIMUM RATINGS

( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

V_CBO

700

V_CEO

V_EBO

I_C

400

12.0

6.0

110

150

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

Max. Operating Junction Temperature

Storage Temperature

TO-3PN

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

I_CEO

Test Conditions

Min.

—

Typ.

—

Max. Unit

V_CB=400V, I_E=0

V_EB=9V, I_C=0

1.0

I_EBO

—

V_CEO

h_FE(1)

h_FE(2)

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=10mA, I_B=0

400

—

V_CE=5V, I_C=5.0A

V_CE=5V, I_C=8.0A

I_C=8.0A,I_B=1.6A

I_C=12.0A,I_B=3.0A

I_C=8.0A,I_B=1.6A

V_CE=10V,I_C=500mA

I_B1=I_B2=1.6A t_p=25us

—

1.5

3.0

1.6

—

Collector-Emitter Saturation Voltage

V_CE(sat)

—

V_BE(sat)

f_T

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Storage Time

MHz

—

T_S

3.5

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