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MJE13009

更新时间: 2024-11-12 10:55:47
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描述
SWITCHMODE Series NPN Silicon Power Transistors

MJE13009 数据手册

  
TIGER ELECTRONIC CO.,LTD  
Product specification  
MJE13009  
SWITCHMODE Series NPN Silicon Power Transistors  
DESCRIPTION  
These devices are designed for highvoltage, highspeed power switching inductive circuits  
where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such  
as Switching Regulators, Inverters, Motor Controls,applications Solenoid/Relay drivers and  
Deflection circuits.  
O
ABSOLUTE MAXIMUM RATINGS  
( Ta = 25 C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value Unit  
l
VCBO  
700  
V
VCEO  
VEBO  
IC  
400  
9
V
V
12.0  
6.0  
110  
150  
A
Base Current  
IB  
A
Total Dissipation at  
Ptot  
Tj  
W
oC  
Max. Operating Junction Temperature  
Storage Temperature  
TO-3PN  
Tstg  
-55~150 oC  
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
ICEO  
Test Conditions  
Min.  
Typ.  
Max. Unit  
VCB=400V, IE=0  
VEB=9V, IC=0  
1.0  
1.0  
mA  
mA  
V
IEBO  
VCEO  
hFE(1)  
hFE(2)  
Collector-Emitter Sustaining Voltage  
DC Current Gain  
IC=10mA, IB=0  
400  
8
40  
30  
VCE=5V, IC=5.0A  
VCE=5V, IC=8.0A  
IC=8.0A,IB=1.6A  
IC=12.0A,IB=3.0A  
IC=8.0A,IB=1.6A  
VCE=10V,IC=500mA  
IB1=IB2=1.6A tp=25us  
6
1.5  
3.0  
1.6  
4
Collector-Emitter Saturation Voltage  
V
VCE(sat)  
VBE(sat)  
fT  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Storage Time  
V
MHz  
us  
TS  
3.5  
4

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