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MJD6039 PDF预览

MJD6039

更新时间: 2024-11-06 03:45:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关
页数 文件大小 规格书
5页 80K
描述
Darlington Power Transistors

MJD6039 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.36
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):1.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MJD6039 数据手册

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MJD6039  
Darlington Power  
Transistors  
DPAK For Surface Mount Applications  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, convertors,  
and power amplifiers.  
http://onsemi.com  
SILICON  
POWER TRANSISTORS  
4 AMPERES,  
Features  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
80 VOLTS, 20 WATTS  
Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
Monolithic Construction With Built−in Base−Emitter Shunt Resistors  
High DC Current Gain − h = 2500 (Typ) @ I = 4.0Adc  
FE  
C
4
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
2
1
Machine Model, C u 400 V  
3
Pb−Free Package is Available  
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
80  
80  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
EB  
MARKING DIAGRAM  
V
Collector Current − Continuous  
Collector Current − Peak  
I
4
8
C
YWW  
J
Base Current  
I
100  
mAdc  
B
6039G  
P
P
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
D
C
Derate above 25°C  
Total Power Dissipation (Note 1)  
1.75  
W
@ T = 25°C  
A
0.014  
Derate above 25°C  
W/°C  
°C  
Y
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
J
stg  
WW  
J6039  
G
= Work Week  
= Device Code  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
Device  
Package  
Shipping  
MJD6039T4  
DPAK  
2500 / Tape & Reel  
2500 / Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJD6039T4G  
DPAK  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MJD6039/D  
 

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