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MJD6039T4 PDF预览

MJD6039T4

更新时间: 2024-11-05 22:26:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
6页 273K
描述
SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS

MJD6039T4 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.69
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:20 W
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):25 MHz最大关闭时间(toff):2900 ns
VCEsat-Max:2.5 VBase Number Matches:1

MJD6039T4 数据手册

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Order this document  
by MJD6036/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
Designed for general purpose power and switching such as output or driver stages  
in applications such as switching regulators, convertors, and power amplifiers.  
SILICON  
POWER TRANSISTORS  
4 AMPERES  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Available on 16 mm Tape and Reel for Automatic Handling (“T4” Suffix)  
Surface Mount Replacements for 2N60342N6039 Series  
80 VOLTS  
20 WATTS  
Monolithic Construction With Built–in Base–Emitter Shunt Resistors  
High DC Current Gain — h  
Complementary Pairs Simplifies Designs  
= 2500 (Typ) @ I = 4.0 Adc  
FE  
C
MAXIMUM RATINGS  
MJD6036  
MJD6039  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CASE 369A–13  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
80  
80  
5
V
CB  
EB  
V
I
C
Collector Current — Continuous  
Peak  
4
8
Base Current  
I
100  
mAdc  
B
CASE 369–07  
P
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
20  
Watts  
W/ C  
D
0.16  
P
D
Total Power Dissipation (1) @ T = 25 C  
A
Derate above 25 C  
1.75  
Watts  
W/ C  
0.014  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
T , T  
65 to +150  
C
Operating and Storage Junction  
Temperature Range  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient (1)  
R
R
θJC  
θJA  
*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
(I = 30 mAdc, I = 0)  
Symbol  
Min  
Max  
Unit  
V
80  
Vdc  
CEO(sus)  
C
B
I
10  
µAdc  
Collector–Cutoff Current  
(V = 40 Vdc, I = 0)  
CEO  
CE  
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.  
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (continued)  
B
inches  
mm  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995

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