MJD86T

更新时间： 2024-11-06 03:45:39

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	143K
描述
NPN SILICON PLANAR TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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MJD86T 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

MJD86T 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR TRANSISTOR

CJD86

DPAK (TO-252)

Plastic Package

For High Speed Switching Application

ABSOLUTE MAXIMUM RATINGS (T_c=25ºC )

VALUE

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

UNITS

6.0

3.0

6.0

0.5

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

I_CP

P_D

Peak Collector Current

Power Dissipation

Mounted on Ceramic Board (250mm²

X 8.0 mm)

1.5

T_j

T_stg

150

- 55 to +150

Junction Temperature

ºC

Storage Temperature Range

*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (see page no 3)

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN TYP MAX

UNITS

V_CEO

I_C=1mA, I_B=0

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

V_CBO

V_EBO

I_CBO

I_EBO

*h_FE

I_C=10µA, V_CE=2V

I_E=10µA, I_C=0

V_CB=40V, I_E=0

V_EB=4V, I_C= 0

**I_C=100mA, V_CE=2V

I_C=3A, V_CE=2V

6.0

1.0

µA

100

560

DYNAMIC CHARACTERISTICS

Transition Frequency

Output Capacitance

f_T

C_ob

V_CE=10V, I_C=50mA

V_CB=10V, I_E=0, f=1MHz

150

MHz

**h_FEClassifications

MARKING

R : 100 - 200, S : 140 - 280, T : 200 - 400,

U : 280 - 560

CDIL

MJD86S

XY MX

CDIL

MJD86T

XY MX

CDIL

MJD86U

XY MX

CDIL

MJD86

XY MX

MJD86R

XY MX

XY= Date Code

**Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%

CJD86Rev100605E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

下载PDF

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