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MJDA42 PDF预览

MJDA42

更新时间: 2024-11-07 17:01:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 308K
描述
300V,0.5A,General Purpose NPN Bipolar Transistor

MJDA42 数据手册

 浏览型号MJDA42的Datasheet PDF文件第2页浏览型号MJDA42的Datasheet PDF文件第3页浏览型号MJDA42的Datasheet PDF文件第4页 
Product Specification  
NPN Silicon Epitaxial Planar Transistor  
MJDA42  
FEATURES  
Collector-Emitter voltage:VCEO=300V.  
Collector current up to 500mA.  
Complement to MJDA92.  
Small flat package.  
Power Dissipation: PD(max)=1W.  
APPLICATIONS  
High voltage transistor.  
TO-252  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
MJDA42  
TO-252  
80 pcs / Tube or 2500 pcs / Tape & Reel  
MJDA42  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
UNIT  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
300  
300  
5
V
V
0.5  
80  
A
RθJA  
Thermal resistance junction to air  
Thermal resistance junction to case  
Thermal resistance junction to case top  
Collector Power Dissipation  
°C /W  
°C /W  
RθJC  
12.5  
Rψjt  
PD  
50  
1
°C /W  
W
Tj ,Tstg  
junction and storage temperature  
-55 to +150  
°C  
STM0285A: July 2019  
www.gmesemi.com  
1

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