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MJ4030_12 PDF预览

MJ4030_12

更新时间: 2024-11-15 12:03:55
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 79K
描述
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

MJ4030_12 数据手册

 浏览型号MJ4030_12的Datasheet PDF文件第2页浏览型号MJ4030_12的Datasheet PDF文件第3页 
PNP MJ4030 – MJ4031 – MJ4032  
MEDIUM POWER COMPLEMENTARY SILICON  
TRANSISTORS  
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration  
and are mounted in Jedec TO-3 metal case.  
They are intented for use as output devices in complementary general purpose amplifier  
applications.  
The complementary NPN types are the MJ4033, MJ4034, MJ4035  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
IE=0  
Value  
Unit  
V
MJ4030  
MJ4031  
MJ4032  
MJ4030  
MJ4031  
MJ4032  
MJ4030  
MJ4031  
MJ4032  
-60  
-80  
-100  
-60  
-80  
-100  
Collector-Base Voltage  
Collector-EmitterVoltage  
Emitter-Base Voltage  
VCEO  
IB=0  
V
VEBO  
IC=0  
-5.0  
V
IC  
IB  
PT  
Collector Current  
Base Current  
Power Dissipation  
-16  
-0.5  
150  
A
A
W
@ TC < 25°  
TJ  
Ts  
Junction Temperature  
Storage Temperature  
200  
°C  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-C  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
1.17  
°C/W  
29/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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