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MJ4033_12 PDF预览

MJ4033_12

更新时间: 2024-01-10 23:11:01
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 79K
描述
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

MJ4033_12 数据手册

 浏览型号MJ4033_12的Datasheet PDF文件第2页浏览型号MJ4033_12的Datasheet PDF文件第3页 
NPN MJ4033 – MJ4034 – MJ4035  
MEDIUM POWER COMPLEMENTARY SILICON  
TRANSISTORS  
They are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration  
and are mounted in Jedec TO-3 metal case.  
They are intented for use as output devices in complementary general purpose amplifier  
applications.  
The complementary PNP types are the MJ4030, MJ4031, MJ4032.  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
IE=0  
Value  
Unit  
V
MJ4033  
MJ4034  
MJ4035  
MJ4033  
MJ4034  
MJ4035  
MJ4033  
MJ4034  
MJ4035  
60  
80  
100  
60  
80  
100  
Collector-Base Voltage  
Collector-EmitterVoltage  
Emitter-Base Voltage  
VCEO  
IB=0  
V
VEBO  
IC=0  
5.0  
V
IC  
IB  
PT  
Collector Current  
Base Current  
Power Dissipation  
16  
0.5  
150  
A
A
W
@ TC < 25°  
TJ  
Ts  
Junction Temperature  
Storage Temperature  
200  
°C  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-C  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
1.17  
°C/W  
29/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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