Datasheet > 晶体管 > 功率双极晶体管> MJ4032TIN/LEAD

MJ4032TIN/LEAD

更新时间： 2024-11-15 13:02:27

品牌	Logo	应用领域
CENTRAL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	584K
描述
Power Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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MJ4032TIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.73
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MJ4032TIN/LEAD 数据手册

Central

MJ4032 PNP

MJ4035 NPN

Semiconductor Corp.

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJ4032, MJ4035

types are Complementary Silicon Power Darlington

Transistors designed for general purpose and amplifier

applications.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

CBO

CEO

EBO

5.0

Base Current

0.5

Power Dissipation

150

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +200

1.17

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=100V, R =1.0kΩ

1.0

CER

CEO

EBO

, T =150

=100V, R =1.0kΩ

°C

5.0

3.0

5.0

=50V

=5.0V

I =100mA

100

CEO

CE(SAT)

BE(ON)

I =10A, I =40mA

2.5

4.0

3.0

I =16A, I =80mA

=3.0V, I =10A

1000

R0 (4-May 2009)

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