Datasheet > MJ4032_03

MJ4032_03

更新时间： 2024-09-24 03:49:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	52K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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数据手册

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MJ4032_03 数据手册

MJ4032

MJ4035

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

■

STMicroelectronics PREFERRED

SALESTYPES

■

COMPLEMENTARY PNP - NPN DEVICES

MONOLITHIC DARLINGTON

CONFIGURATION

■

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

■

GENERAL PURPOSE SWITCHING

GENERAL PURPOSE AMPLIFIERS

■

TO-3

DESCRIPTION

The MJ4035 is a silicon Epitaxial-Base NPN

power transistor in monolithic Darlington

configuration mounted in Jedec TO-3 metal case.

It is inteded for use in general purpose and

amplifier applications.

INTERNAL SCHEMATIC DIAGRAM

The complementary PNP type is the MJ4032.

R₁Typ. = 6 KΩ

R₂Typ. = 55 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

PNP

NPN

MJ4032

MJ4035

100

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

I_B

Base Current

0.5

P_tot

T_stg

T_j

150

^oC

Total Dissipation at T_c≤ 25 C

Storage Temperature

-65 to 200

200

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/4

September 2003

12 3 4

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