MJ4030

更新时间： 2024-11-15 10:55:55

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
4页	216K
描述
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJ4030 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	最大集电极电流 (IC)：	16 A
配置：	DARLINGTON	最小直流电流增益 (hFE)：	1000
最高工作温度：	200 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	150 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

MJ4030 数据手册

MEDIUM POWER COMPLEMENTARY SILICON

TRANSISTORS

For use as output devices in complementary general purpose amplifier

applications.

•

High DC current Gain – h_FE=3500 (Typ) @ I_C=10 Adc

Monolithic Construction with Built-in Base Emitter Shunt Resistor

The MJ4030/31/32 ares the transistors NPN

The complementary PNP types are the MJ4033/34/35

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

MJ4030

MJ4033

MJ4031

MJ4034

MJ4032

MJ4035

MJ4030

MJ4033

MJ4031

MJ4034

MJ4032

MJ4035

MJ4030

MJ4033

MJ4031

MJ4034

MJ4032

MJ4035

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base Voltage

I_E=0

V_CBO

100

I_B=0

I_C=0

V_CEO

100

V_EBO

5.0

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MJ4030相关器件

型号	品牌	获取价格	描述	数据表
MJ4030_12	COMSET	获取价格	MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
MJ4030LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 16A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2
MJ4031	ISC	获取价格	isc Silicon PNP Darlingtion Power Transistor
MJ4031	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
MJ4031	COMSET	获取价格	MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
MJ4031	MOSPEC	获取价格	POWER TRANSISTORS(16A,60-100V,150W)
MJ4031	CENTRAL	获取价格	Power Transistors
MJ4031	ASI	获取价格	Transistor
MJ4031	MOTOROLA	获取价格	Transistor
MJ4031	NJSEMI	获取价格	Trans Darlington PNP 80V 16A 3-Pin(2+Tab) TO-3 Sleeve