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MJ15020 PDF预览

MJ15020

更新时间: 2024-01-02 08:11:34
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 138K
描述
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS

MJ15020 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3包装说明:LEAD FREE, CASE 1-07, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.46
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

MJ15020 数据手册

 浏览型号MJ15020的Datasheet PDF文件第1页浏览型号MJ15020的Datasheet PDF文件第3页浏览型号MJ15020的Datasheet PDF文件第4页 
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
V
Vdc  
CEO(sus)  
(I = 100 mAdc, I = 0)  
MJ15018, MJ15019  
MJ15020, MJ15021  
200  
250  
C
B
Collector Cutoff Current  
I
µAdc  
µAdc  
CEO  
(V  
CE  
(V  
CE  
= 150 Vdc, I = 0)  
MJ15018, MJ15019  
MJ15020, MJ15021  
500  
500  
B
= 200 Vdc, I = 0)  
B
Emitter Cutoff Current  
(V = 7.0 Vdc, I = 0)  
I
500  
EBO  
EB  
C
SECOND BREAKDOWN  
Second Breakdown Collector Current with Base Forward–Biased  
I
3.0  
Adc  
S/b  
(V  
CE  
= 50 Vdc, t = 0.5 s (non–repetitive)  
ON CHARACTERISTICS (1)  
DC Current Gain  
h
FE  
(I = 1.0 Adc, V  
= 4.0 V)  
= 4.0 V)  
30  
10  
C
CE  
CE  
(I = 3.0 Adc, V  
C
Collector–Emitter Saturation Voltage  
(I = 1.0 Adc, I = 0.1 Adc)  
V
1.0  
Vdc  
Vdc  
CE(sat)  
C
B
Base–Emitter on Voltage  
(I = 1.0 Adc, V = 4.0 Vdc)  
V
BE(on)  
2.0  
C
CE  
DYNAMIC CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f
20  
MHz  
pF  
T
(I = 0.5 Adc, V  
C CE  
= 10 Vdc, f = 1.0 MHz)  
test  
Output Capacitance  
(V = 10 Vdc, I = 0, F  
C
500  
ob  
= 1.0 MHz)  
300 µs, Duty Cycle  
CB test  
E
(1) Pulse Test: Pulse Width  
2%  
TYPICAL DYNAMIC CHARACTERISTICS  
10  
7.0  
5.0  
3.0  
2.0  
200  
T
= 25°C  
100  
70  
C
50  
1.0  
0.7  
0.5  
NPN  
30  
20  
0.3  
0.2  
WIRE BOND LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN  
LIMIT  
PNP  
10  
0.1  
0.07  
0.05  
7.0  
5.0  
T
V
= 25°C  
J
= 4.0 Vdc  
0.03  
0.02  
CE  
MJ15018/19  
3.0  
2.0  
MJ15020/21  
0.01  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
5.0 7.0 10  
20  
30  
50 70 100  
200 300  
500  
I
, COLLECTOR CURRENT (AMPS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
C
CE  
Figure 2. DC Current Gain  
Figure 3. Maximum Rated Forward Biased  
Safe Operating Area  
2
Motorola Bipolar Power Transistor Device Data  

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