5秒后页面跳转
捷配首页

Datasheet > MJ11028G
MJ11028G PDF预览

MJ11028G

更新时间： 2024-11-20 04:15:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 68K
描述
High−Current Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

MJ11028G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-3包装说明：LEAD FREE, CASE 197A-05, TO-3, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.75外壳连接：COLLECTOR
最大集电极电流 (IC)：50 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：400
JEDEC-95代码：TO-204AAJESD-30 代码：O-MBFM-P2
JESD-609代码：e1元件数量：1
端子数量：2最高工作温度：200 °C
封装主体材料：METAL封装形状：ROUND
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：300 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：PIN/PEG端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON

MJ11028G 数据手册

 浏览型号MJ11028G的Datasheet PDF文件第2页浏览型号MJ11028G的Datasheet PDF文件第3页浏览型号MJ11028G的Datasheet PDF文件第4页 
MJ11028, MJ11030,  
MJ11032 (NPN)  
MJ11029, MJ11033 (PNP)  
High−Current  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
High−Current Complementary Silicon Power Transistors are for use  
as output devices in complementary general purpose amplifier  
applications.  
50 AMPERE  
COMPLEMENTARY  
DARLINGTON POWER  
TRANSISTORS  
Features  
• High DC Current Gain − h = 1000 (Min) @ I = 25 Adc  
FE  
C
60 − 120 VOLTS  
300 WATTS  
h
= 400 (Min) @ I = 50 Adc  
C
FE  
• Curves to 100 A (Pulsed)  
• Diode Protection to Rated I  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor  
• Junction Temperature to +200_C  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
TO−204 (TO−3)  
CASE 197A  
STYLE 1  
Collector−Emitter Voltage  
MJ11028/29  
MJ11030  
MJ11032/33  
V
CEO  
V
CBO  
V
EBO  
60  
90  
120  
Vdc  
Collector−Base Voltage  
Emitter−Base Voltage  
MJ11028/29  
MJ11030  
MJ11032/33  
60  
90  
120  
Vdc  
MARKING DIAGRAM  
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak (Note 1)  
I
50  
100  
C
MJ110xxG  
AYYWW  
MEX  
Base Current − Continuous  
I
2.0  
Adc  
B
Total Power Dissipation @ T = 25°C  
P
300  
1.71  
W
W/°C  
C
D
Derate Above 25°C @ T = 100_C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
−ꢀꢀ55 to +200  
°C  
J
stg  
MJ110xx = Device Code  
xx = 28, 29, 30, 32, 33  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
G
A
YY  
WW  
MEX  
= Pb−Free Package  
= Location Code  
= Year  
Maximum Lead Temperature for  
Soldering Purposes for v 10 seconds  
T
275  
_C  
L
= Work Week  
Thermal Resistance, Junction−to−Case  
R
q
JC  
0.58  
°C/W  
= Country of Orgin  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
MJ11028/D  
 
1234

中文翻译

下载PDF

MJ11028G 替代型号

型号 品牌 替代类型 描述 数据表
MJ11032G ONSEMI

类似代替

 High−Current Complementary Silicon Power Transistors
MJ11028 ONSEMI

类似代替

 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11030G ONSEMI

功能相似

 High−Current Complementary Silicon Power Transistors

与MJ11028G相关器件

型号 品牌 获取价格 描述 数据表
MJ11029 ISC

获取价格

 		isc Silicon PNP Darlington Power Transistor
MJ11029 MOTOROLA

获取价格

 		50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
MJ11029 ONSEMI

获取价格

 		COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11029 SEME-LAB

获取价格

 		COMPLEMENTARY DARLINGTON POWER TRANSISTOR
MJ11029 MOSPEC

获取价格

 		POWER TRANSISTOR(50A,60-120V,300W)
MJ11029 NJSEMI

获取价格

 		Trans Darlington PNP 60V 50A 3-Pin(2+Tab) TO-204 Tray
MJ11029G ONSEMI

获取价格

 		High−Current Complementary Silicon Power Transistors
MJ1102FE-R52 OHMITE

获取价格

 		RES 11K OHM 1/8W 1% AXIAL
MJ11030 ISC

获取价格

 		isc Silicon NPN Darlington Power Transistor
MJ11030 MOTOROLA

获取价格

 		50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

与MJ11028G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证