5秒后页面跳转
MJ11029 PDF预览

MJ11029

更新时间: 2024-09-25 22:46:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 157K
描述
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

MJ11029 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3包装说明:CASE 197A-05, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.22
外壳连接:COLLECTOR最大集电极电流 (IC):50 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):400JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn80Pb20)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MJ11029 数据手册

 浏览型号MJ11029的Datasheet PDF文件第2页浏览型号MJ11029的Datasheet PDF文件第3页浏览型号MJ11029的Datasheet PDF文件第4页 
Order this document  
by MJ11028/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general purpose amplifier applica-  
tions.  
High DC Current Gain — h  
h
= 1000 (Min) @ I = 25 Adc  
C
FE  
FE  
= 400 (Min) @ I = 50 Adc  
C
Curves to 100 A (Pulsed)  
Diode Protection to Rated I  
Monolithic Construction with Built–In Base–Emitter Shunt Resistor  
Junction Temperature to +200 C  
C
*Motorola Preferred Device  
MAXIMUM RATINGS  
50 AMPERE  
COMPLEMENTARY  
SILICON  
MJ11028 MJ11030 MJ11032  
MJ11029 MJ11031 MJ11033  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
90  
90  
5
120  
120  
DARLINGTON  
V
CB  
POWER TRANSISTORS  
60120 VOLTS  
300 WATTS  
V
EB  
Collector Current — Continuous  
Peak  
I
C
50  
100  
I
CM  
Base Current — Continuous  
I
B
2
Adc  
Total Power Dissipation @ T = 25 C  
Derate above 25 C @ T = 100 C  
C
P
D
300  
1.71  
Watts  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +200  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Maximum Lead Temperature for  
T
L
275  
C
CASE 197A–05  
TO–204AE (TO–3)  
Soldering Purposes for  
10 seconds  
Thermal Resistance Junction to Case  
R
0.584  
C
θJC  
COLLECTOR  
COLLECTOR  
PNP  
NPN  
MJ11029  
MJ11031  
MJ11033  
MJ11028  
MJ11030  
MJ11032  
BASE  
BASE  
3.0 k  
25  
3.0 k  
25  
EMITTER  
EMITTER  
Figure 1. Darlington Circuit Schematic  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

MJ11029 替代型号

型号 品牌 替代类型 描述 数据表
MJ11015G ONSEMI

功能相似

High-Current Complementary Silicon Transistors
MJ11033G ONSEMI

功能相似

High−Current Complementary Silicon Power Transistors

与MJ11029相关器件

型号 品牌 获取价格 描述 数据表
MJ11029G ONSEMI

获取价格

High−Current Complementary Silicon Power Transistors
MJ1102FE-R52 OHMITE

获取价格

RES 11K OHM 1/8W 1% AXIAL
MJ11030 ISC

获取价格

isc Silicon NPN Darlington Power Transistor
MJ11030 MOTOROLA

获取价格

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
MJ11030 ONSEMI

获取价格

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11030 SEME-LAB

获取价格

COMPLEMENTARY DARLINGTON POWER TRANSISTOR
MJ11030 MOSPEC

获取价格

POWER TRANSISTOR(50A,60-120V,300W)
MJ11030 NJSEMI

获取价格

Trans Darlington NPN 90V 50A 3-Pin(2+Tab) TO-204 Tray
MJ11030G ONSEMI

获取价格

High−Current Complementary Silicon Power Transistors
MJ11031 SEME-LAB

获取价格

COMPLEMENTARY DARLINGTON POWER TRANSISTOR