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MJ11031 PDF预览

MJ11031

更新时间: 2024-09-24 22:34:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 157K
描述
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

MJ11031 技术参数

生命周期:Obsolete零件包装代码:BFM
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.43外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:90 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):400
JEDEC-95代码:TO-204AEJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:PNP最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MJ11031 数据手册

 浏览型号MJ11031的Datasheet PDF文件第2页浏览型号MJ11031的Datasheet PDF文件第3页浏览型号MJ11031的Datasheet PDF文件第4页 
Order this document  
by MJ11028/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general purpose amplifier applica-  
tions.  
High DC Current Gain — h  
h
= 1000 (Min) @ I = 25 Adc  
C
FE  
FE  
= 400 (Min) @ I = 50 Adc  
C
Curves to 100 A (Pulsed)  
Diode Protection to Rated I  
Monolithic Construction with Built–In Base–Emitter Shunt Resistor  
Junction Temperature to +200 C  
C
*Motorola Preferred Device  
MAXIMUM RATINGS  
50 AMPERE  
COMPLEMENTARY  
SILICON  
MJ11028 MJ11030 MJ11032  
MJ11029 MJ11031 MJ11033  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
90  
90  
5
120  
120  
DARLINGTON  
V
CB  
POWER TRANSISTORS  
60120 VOLTS  
300 WATTS  
V
EB  
Collector Current — Continuous  
Peak  
I
C
50  
100  
I
CM  
Base Current — Continuous  
I
B
2
Adc  
Total Power Dissipation @ T = 25 C  
Derate above 25 C @ T = 100 C  
C
P
D
300  
1.71  
Watts  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +200  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Maximum Lead Temperature for  
T
L
275  
C
CASE 197A–05  
TO–204AE (TO–3)  
Soldering Purposes for  
10 seconds  
Thermal Resistance Junction to Case  
R
0.584  
C
θJC  
COLLECTOR  
COLLECTOR  
PNP  
NPN  
MJ11029  
MJ11031  
MJ11033  
MJ11028  
MJ11030  
MJ11032  
BASE  
BASE  
3.0 k  
25  
3.0 k  
25  
EMITTER  
EMITTER  
Figure 1. Darlington Circuit Schematic  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

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