Datasheet > MJ11029

MJ11029

更新时间： 2024-11-23 22:46:15

品牌	Logo	应用领域
SEME-LAB		晶体晶体管
页数	文件大小	规格书
2页	62K
描述
COMPLEMENTARY DARLINGTON POWER TRANSISTOR

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中文翻译

获取价格

数据手册

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MJ11029 数据手册

NPN

PNP

MJ11028

MJ11030

MJ11032

MJ11029

MJ11031

MJ11033

S E M E

LA B

MECHANICAL DATA

Dimensions in mm (inches)

COMPLEMENTARY

DARLINGTON

POWER TRANSISTOR

25.4

(1.0)

10.92

(0.430)

1.57

(0.062)

FEATURES

• HIGH DC CURRENT GAIN

= 1000 Min @ I = 25A

= 400 Min 0@ I = 50A

• CURVES TO 100A (Pulsed)

• DIODE PROTECTION TO RATED I

• MONOLITHIC CONSTRUCTION WITH

BUILT-IN BASE – EMITTER SHUNT RESISTOR

+0.4

–0

+0.016

–0

4.1

(0.161

4.0 ± 0.1

(0.157 ± 0.004)

11.65 ± 0.35

(0.459 ± 0.014)

9.0

(0.354)

)

• JUNCTION TEMPERATURE TO +200°C

0.127

(0.005)

Tolerance ±

unless otherwise stated

APPLICATIONS

TO–3

Pin 2 – Emitter

For use as output devices in complementary

general purpose amplifier applications.

Pin 1 – Base

Case – Collector

ABSOLUTE MAXIMUM RATINGS

MJ11028 MJ11030 MJ11032

MJ11029 MJ11031 MJ11033

= 25°C unless otherwise stated)

case

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

60V

90V

120V

CEO

CBO

EBO

50A

100A

Total Dissipation at T

= 25°C

case

300W

1.71W/°C

–55 to +175°C

tot

Derate above 25°C

, T

Operating and Storage Junction Temperature Range

STG

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 2/96

中文翻译

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