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MHPM6B25N120SL PDF预览

MHPM6B25N120SL

更新时间: 2024-11-10 22:30:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
10页 268K
描述
Hybrid Power Module

MHPM6B25N120SL 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-P17
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:FAST SOFT, UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):25 A
集电极-发射极最大电压:1200 V配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-PUFM-P17元件数量:6
端子数量:17封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1216 ns
标称接通时间 (ton):470 nsBase Number Matches:1

MHPM6B25N120SL 数据手册

 浏览型号MHPM6B25N120SL的Datasheet PDF文件第2页浏览型号MHPM6B25N120SL的Datasheet PDF文件第3页浏览型号MHPM6B25N120SL的Datasheet PDF文件第4页浏览型号MHPM6B25N120SL的Datasheet PDF文件第5页浏览型号MHPM6B25N120SL的Datasheet PDF文件第6页浏览型号MHPM6B25N120SL的Datasheet PDF文件第7页 
Order this document  
by MHPM6B10N120/D  
SEMICONDUCTOR TECHNICAL DATA  
Integrated Power Stage  
for 460 VAC Motor Drives  
These modules integrate a 3–phase inverter in a single  
convenient package. They are designed for 2.0, 3.0, and 5.0 hp  
motor drive applications. The inverter incorporates advanced  
insulated gate bipolar transistors (IGBT) matched with fast soft  
free–wheeling diodes to give optimum performance. The top  
connector pins are designed for easy interfacing to the user’s  
control board.  
Motorola Preferred Devices  
10, 15, 25 A, 1200 V  
Short Circuit Rated 10 µs @ 125°C, 720 V  
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)  
Compact Package Outline  
HYBRID POWER MODULES  
Access to Positive and Negative DC Bus  
SL SUFFIX  
CASE 464A–01  
Style 1  
UL  
Recognized  
ORDERING INFORMATION  
Device  
Current Rating  
Package  
MHPM6B10N120SL  
MHPM6B15N120SL  
MHPM6B25N120SL  
10  
15  
25  
464A–01  
Style 1  
MHPM6B10N120SS  
MHPM6B15N120SS  
MHPM6B25N120SS  
10  
15  
25  
464B–02  
Style 1  
SS SUFFIX  
CASE 464B–02  
Style 1  
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
IGBT Reverse Voltage  
Symbol  
Value  
1200  
± 20  
Unit  
V
V
V
CES  
Gate-Emitter Voltage  
V
GES  
Continuous IGBT Collector Current (T = 80°C)  
10A120  
15A120  
25A120  
I
10  
15  
25  
A
C
Cmax  
(1)  
Repetitive Peak IGBT Collector Current  
10A120  
15A120  
25A120  
I
20  
30  
50  
A
A
C(pk)  
Fmax  
Continuous Diode Current (T = 25°C)  
10A120  
15A120  
25A120  
I
10  
15  
25  
C
Continuous Diode Current (T = 80°C)  
10A120  
15A120  
25A120  
I
8.3  
11  
14  
A
C
F80  
(1)  
Repetitive Peak Diode Current  
10A120  
15A120  
25A120  
I
20  
30  
50  
A
F(pk)  
IGBT Power Dissipation per die (T = 95°C)  
10A120  
15A120  
25A120  
P
41  
50  
65  
W
W
C
D
D
Diode Power Dissipation per die (T = 95°C)  
10A120  
15A120  
25A120  
P
16  
22  
27  
C
(1) 1.0 ms = 1.0% duty cycle  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1998  

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