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MHPM7A30E60DC3 PDF预览

MHPM7A30E60DC3

更新时间: 2024-11-10 22:22:27
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摩托罗拉 - MOTOROLA 晶体晶体管双极性晶体管局域网
页数 文件大小 规格书
6页 171K
描述
Hybrid Power Module

MHPM7A30E60DC3 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-PUFM-X24针数:24
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:ULTRA FAST SOFT
最大集电极电流 (IC):30 A集电极-发射极最大电压:600 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-PUFM-X24元件数量:7
端子数量:24最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):34 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:2.6 VBase Number Matches:1

MHPM7A30E60DC3 数据手册

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Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MHPM7A30E60DC3/D  
Motorola Preferred Device  
Integrated Power Stage  
for 230 VAC Motor Drive  
This module integrates a 3–phase inverter, 3–phase rectifier,  
brake, and temperature sense in a single convenient package. It is  
designed for 3.0 hp general purpose 3–phase induction motor drive  
applications. The inverter incorporates advanced insulated gate  
bipolar transistors (IGBT) with integrated ESD protection Gate–  
Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes  
to give optimum performance. The solderable top connector pins  
are designed for easy interfacing to the user’s control board.  
30 AMP, 600 VOLT  
HYBRID POWER MODULE  
Short Circuit Rated 10 µs @ 125°C, 400 V  
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)  
Compact Package Outline  
Access to Positive and Negative DC Bus  
Independent Brake Circuit Connections  
UL Recognition Pending  
ORDERING INFORMATION  
Voltage  
Rating  
Current  
Rating  
Equivalent  
Horsepower  
CASE 464D–01  
ISSUE O  
Device  
PHPM7A30E60DC3  
600  
30  
3.0  
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
V
Repetitive Peak Input Rectifier Reverse Voltage (T = 25°C to 150°C)  
V
RRM  
900  
J
IGBT Reverse Voltage  
Gate-Emitter Voltage  
V
600  
V
CES  
GES  
V
±20  
V
Continuous IGBT Collector Current (T = 25°C)  
I
I
30  
A
C
Cmax  
Cmax  
Continuous IGBT Collector Current (T = 80°C)  
21.8  
A
C
(1)  
Repetitive Peak IGBT Collector Current  
Continuous Free–Wheeling Diode Current (T = 25°C)  
I
60  
A
C(pk)  
I
30  
A
C
Fmax  
Continuous Free–Wheeling Diode Current (T = 80°C)  
I
20  
A
C
F80  
(1)  
Repetitive Peak Free–Wheeling Diode Current  
Average Converter Output Current (Peak–to–Average ratio of 10, T = 95°C)  
I
60  
27.6  
A
F(pk)  
I
A
C
Omax  
IGBT Power Dissipation per die (T = 95°C)  
P
34  
W
W
°C  
s
C
D
D
Free–Wheeling Diode Power Dissipation per die (T = 95°C)  
P
23  
C
Junction Temperature Range  
T
40 to +150  
10  
J
Short Circuit Duration (V  
= 400 V, T = 125°C)  
t
sc  
CE  
J
Isolation Voltage, pin to baseplate  
Operating Case Temperature Range  
Storage Temperature Range  
V
2500  
Vac  
°C  
°C  
lb–in  
ISO  
T
40 to +95  
40 to +150  
12  
C
T
stg  
Mounting Torque — Heat Sink Mounting Holes  
(1) 1.0 ms = 1.0% duty cycle  
Preferred devices are Motorola recommended choices for future use and best overall value.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Motorola, Inc. 1998  

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