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MHPM7B16A120B PDF预览

MHPM7B16A120B

更新时间: 2024-11-10 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 272K
描述
Hybrid Power Module

MHPM7B16A120B 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X25
Reach Compliance Code:unknown风险等级:5.83
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):16 A集电极-发射极最大电压:1200 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-PUFM-X25元件数量:7
端子数量:25最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:3.5 VBase Number Matches:1

MHPM7B16A120B 数据手册

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Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MHPM7B16A120B/D  
Motorola Preferred Device  
Integrated Power Stage for 3.0 hp Motor Drives  
This module integrates a 3–phase input rectifier bridge, 3–phase output  
inverter and brake transistor/diode in a single convenient package. The output  
inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched  
with free–wheeling diodes to give optimal dynamic performance. It has been  
configured for use as a three–phase motor drive module or for many other  
power switching applications. The top connector pins have been designed for  
easy interfacing to the user’s control board.  
16 AMP, 1200 VOLT  
HYBRID POWER MODULE  
Short Circuit Rated 10 µs @ 25°C  
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)  
Convenient Package Outline  
UL  
Recognized and Designed to Meet VDE  
Access to Positive and Negative DC Bus  
PLASTIC PACKAGE  
CASE 440A–01, Style 1  
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
INPUT RECTIFIER BRIDGE  
Symbol  
Value  
Unit  
Repetitive Peak Reverse Voltage  
Average Output Rectified Current (1)  
Peak Non-repetitive Surge Current  
OUTPUT INVERTER  
V
1200  
16  
V
A
A
RRM  
I
O
I
330  
FSM  
IGBT Reverse Voltage  
V
V
1200  
V
V
CES  
Gate-Emitter Voltage  
± 20  
GES  
Continuous IGBT Collector Current  
Peak IGBT Collector Current – (PW = 1.0 ms) (2)  
Continuous Free-Wheeling Diode Current  
Peak Free-Wheeling Diode Current – (PW = 1.0 ms) (2)  
IGBT Power Dissipation  
I
16  
A
C
I
32  
A
C(pk)  
I
16  
A
F
I
32  
75  
A
F(pk)  
P
W
W
°C  
°C  
D
D
Free-Wheeling Diode Power Dissipation  
IGBT Junction Temperature Range  
Free-Wheeling Diode Junction Temperature Range  
P
40  
T
– 40 to +125  
– 40 to +125  
J
J
T
(1) 1 cycle = 50 or 60 Hz  
(2) 1 ms = 1.0% duty cycle  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  

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