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MHPM7A15S120DC3

更新时间： 2024-11-10 22:30:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 169K
描述
Hybrid Power Module

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中文翻译

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MHPM7A15S120DC3 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PUFM-P24
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：N其他特性：UL RECOGNIZED, FAST SOFT
外壳连接：ISOLATED最大集电极电流 (IC)：15 A
集电极-发射极最大电压：1200 V配置：COMPLEX
JESD-30 代码：R-PUFM-P24元件数量：7
端子数量：24封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：UPPER晶体管应用：POWER CONTROL
晶体管元件材料：SILICONBase Number Matches：1

MHPM7A15S120DC3 数据手册

 浏览型号MHPM7A15S120DC3的Datasheet PDF文件第2页浏览型号MHPM7A15S120DC3的Datasheet PDF文件第3页浏览型号MHPM7A15S120DC3的Datasheet PDF文件第4页浏览型号MHPM7A15S120DC3的Datasheet PDF文件第5页浏览型号MHPM7A15S120DC3的Datasheet PDF文件第6页 
Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MHPM7A15S120DC3/D  
Motorola Preferred Device  
Integrated Power Stage for 3.0 hp  
460 VAC Motor Drive  
This module integrates a 3–phase inverter, 3–phase rectifier,  
brake, and temperature sense in a single convenient package. It is  
designed for 3.0 hp general purpose 3–phase induction motor drive  
applications. The inverter incorporates advanced insulated gate  
bipolar transistors (IGBT) matched with fast soft free–wheeling  
diodes to give optimum performance. The solderable top connector  
pins are designed for easy interfacing to the user’s control board.  
15 AMP, 1200 VOLT  
HYBRID POWER MODULE  
•
•
•
•
•
•
Short Circuit Rated 10 µs @ 125°C, 720 V  
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)  
Compact Package Outline  
Access to Positive and Negative DC Bus  
Independent Brake Circuit Connections  
UL Recognition Pending  
ORDERING INFORMATION  
Voltage  
Rating  
Current  
Rating  
Equivalent  
Horsepower  
CASE 464D–01  
ISSUE O  
Device  
PHPM7A15S120DC3  
1200  
15  
3.0  
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
900  
Unit  
V
Repetitive Peak Input Rectifier Reverse Voltage (T = 25°C to 150°C)  
V
J
RRM  
RSM  
(1)  
Non–Repetitive Peak Input Rectifier Reverse Voltage  
V
1600  
V
(T = 25°C to 150°C)  
J
IGBT Reverse Voltage  
Gate-Emitter Voltage  
V
V
1200  
V
V
CES  
±20  
GES  
Continuous IGBT Collector Current (T = 25°C)  
I
15  
A
C
Cmax  
(2)  
Repetitive Peak IGBT Collector Current  
Continuous Free–Wheeling Diode Current (T = 25°C)  
I
30  
A
C(pk)  
Fmax  
I
15  
A
C
Continuous Free–Wheeling Diode Current (T = 80°C)  
I
11.7  
A
C
F80  
(2)  
Repetitive Peak Free–Wheeling Diode Current  
Average Converter Output Current (Peak–to–Average ratio of 10, T = 95°C)  
I
30  
A
F(pk)  
I
16  
36  
A
C
Omax  
IGBT Power Dissipation per die (T = 95°C)  
P
W
W
°C  
s
C
D
D
Free–Wheeling Diode Power Dissipation per die (T = 95°C)  
P
16  
C
Junction Temperature Range  
T
J
–40 to +150  
10  
Short Circuit Duration (V  
= 720 V, T = 125°C)  
t
sc  
CE  
J
Isolation Voltage, pin to baseplate  
Operating Case Temperature Range  
Storage Temperature Range  
V
2500  
Vac  
°C  
°C  
lb–in  
ISO  
T
–40 to +95  
–40 to +150  
12  
C
T
stg  
Mounting Torque — Heat Sink Mounting Holes  
—
(1) Half–Sine 60 Hz, maximum reverse voltage capability decreases by 0.1% per °C at lower temperature  
(2) 1.0 ms = 1.0% duty cycle  
Preferred devices are Motorola recommended choices for future use and best overall value.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Motorola, Inc. 1998  
123456

中文翻译

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