Datasheet > MHA100KN

MHA100KN

更新时间： 2024-09-16 17:01:15

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MHA100KN 数据手册

High Performance

Low Power

Hall-Effect Sensor

MHA100KN

FEATURES

• Low power CMOS process

DESCRIPTION

• Wide operation voltage range: 1.65~5.5V

• Ultra-low power consumption, <5uA@1.8V

• Good RF noise immunity

• Omnipolar operation

• Dual output, Unipolar Hall switch for N and S

• -40C to +85C operation

• RoHS compliant

• DFN4 package with 1.0mmx1.4mmx0.37mm

APPLICATIONS

• TWS headset

• Smart meter

• Cover switch

Figure 1: Signal Path

Information furnished by MEMSIC is believed to be accurate and reliable.

However, no responsibility is assumed by MEMSIC for its use, or for any

infringements of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or

patent rights of MEMSIC.

www.memsic.com

MEMSIC MHA100KN

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