Datasheet > MHA160N/S

MHA160N/S

更新时间： 2024-09-16 17:02:07

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MHA160N/S 数据手册

High Performance

Low Power

Hall-Effect Sensor

MHA160N/S

FEATURES

DESCRIPTION

 Low power CMOS process

 Wide operation voltage range: 1.65~5.5V

 Ultra-low power consumption, <5uA@1.8V

 Good RF noise immunity

 Unipolar operation

 Single output, Unipolar Hall switch for N or S

 -40C to +85C operation

 RoHS compliant

 SOT553 package with 1.20mmx1.6mmx0.5mm

Figure 1 ：Signal Path

Information furnished by MEMSIC is believed to be accurate and reliable.

However, no responsibility is assumed by MEMSIC for its use, or for any

infringements of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or

patent rights of MEMSIC.

www.memsic.com

MEMSIC MHA160N/S Rev.A

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1/17/2022

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