Datasheet > MG7901WZ

MG7901WZ

更新时间： 2024-09-17 11:08:19

品牌	Logo	应用领域
罗姆 - ROHM		功率因数校正
页数	文件大小	规格书
4页	241K
描述
Application: Partial Switching PFC, Discharge Circuit, Brake for Inverter For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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MG7901WZ 数据手册

MG7901WZ

600V 40A Insulated Gate Bipolar Transistor

Datasheet

lOutline

Wafer

V_CES

I_{C (Nominal)}

600V

40A

V_{CE(sat) (Typ.)}

1.4V

Max. Possible Chips per Wafer

1392pcs

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) Soft Switching

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

lApplication

Partial Switching PFC

Discharge Circuit

Brake for Inverter

lAbsolute Maximum Ratings

Parameter

Symbol

Value

600

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

160

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2019.08 - Rev.A

1/3

12 3 4

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