Datasheet > MG800FXF1ZMS3

MG800FXF1ZMS3

更新时间： 2024-03-03 10:08:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	676K
描述
SiC MOSFET/SBD Module, 3300 V, 800 A, iXPLV

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MG800FXF1ZMS3 数据手册

MG800FXF1ZMS3

High-Power Module Silicon Carbide N-Channel MOSFET, Silicon Carbide SBD

MG800FXF1ZMS3

1. Applications

•

High-Power Switching

•

Motor Controllers (including rail traction)

2. Features

(1) VDSS = 3300 V, ID = 800 A All SiC MOSFET Module(Low loss & High speed switching)

(2) This module is equipped with SiC MOSFET on the high side and SiC SBD on the low side.

(3) Low stray inductance, low thermal resistance, maximum Tch= 175 �

(4) New generation standard package(Compact & easily handled by paralleling)

(5) Electrodes are isolated from metal base plate.

3. Packaging and Internal Circuit

iXPLV

Note : P and N terminal should use two screws fastened in each and AC terminal should use three screws fastened.

Start of commercial production

2023-10

2023-12-22

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...11

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