生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
元件数量: | 2 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG50Q2YL1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG50Q2YS40 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG50Q2YS50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG50Q2YS50A | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG50Q2YS9 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50Q2YS91 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50Q6ES1 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50Q6ES11 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50Q6ES40 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG50Q6ES50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |