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MG50Q2YS9 PDF预览

MG50Q2YS9

更新时间: 2024-09-25 19:26:03
品牌 Logo 应用领域
东芝 - TOSHIBA 双极性晶体管
页数 文件大小 规格书
1页 47K
描述
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG50Q2YS9 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
最大集电极电流 (IC):50 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE元件数量:2
极性/信道类型:N-CHANNEL认证状态:Not Qualified
晶体管元件材料:SILICONBase Number Matches:1

MG50Q2YS9 数据手册

  

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100MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO14, ROHS COMPLIANT, SO-14