Datasheet > MDU1516URH

MDU1516URH

更新时间： 2024-11-21 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1171K
描述
Single N-channel Trench MOSFET 30V, 47.6A, 9.0m(ohm)

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MDU1516URH 数据手册

MDU1516

Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

General Description

Features

The MDU1516 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDU1516 is suitable device for DC/DC Converter

and general purpose applications.



V_DS= 30V

I_D= 47.6A @V_GS= 10V

R_DS(ON)

< 9.0 mΩ @V_GS= 10V

< 14.0 mΩ @V_GS= 4.5V

100% UIL Tested

100% Rg Tested



PowerDFN56

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

±20

Gate-Source Voltage

V_GSS

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

47.6

38.0

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

18.6⁽³⁾

14.9⁽³⁾

100

I_DM

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

35.7

22.8

P_D

5.5⁽³⁾

3.5⁽³⁾

53.0

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

22.7

Unit

^oC/W

R_θJC

3.5

Feb. 2014. Version 1.3

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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