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MDU1721VRH PDF预览

MDU1721VRH

更新时间: 2024-11-19 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 983K
描述
Single N-channel Trench MOSFET 40V, 100A, 1.4m(ohm)

MDU1721VRH 数据手册

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MDU1721  
Single N-channel Trench MOSFET 40V, 100A, 1.4mΩ  
General Description  
Features  
The MDU1721 uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDU1721 is suitable device for Synchronous  
Rectification For Server and general purpose applications.  
VDS = 40V  
ID = 100A @VGS = 10V  
RDS(ON)  
< 1.4@VGS = 10V  
100% UIL Tested  
100% Rg Tested  
D
D
D
D
D
D
D
D
G
S
S
S
G
G
S
S
S
PDFN56  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
Rating  
40  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
±20  
V
TC=25oC (Silicon Limited)  
TC=25oC (Package Limited)  
TC=100oC  
204.1  
100.0  
129.1  
32.9(3)  
400.0  
96.2  
Continuous Drain Current (1)  
ID  
A
TA=25oC(3)  
Pulsed Drain Current  
Power Dissipation  
IDM  
TC=25oC  
TC=100oC  
TA=25oC(3)  
PD  
38.5  
2.5(3)  
W
Single Pulse Avalanche Energy (2)  
EAS  
450  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
50  
Unit  
oC/W  
RθJC  
1.3  
1
May. 2013. Rev. 1.0  
MagnaChip Semiconductor Ltd.  

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