Datasheet > MDU1931VRH

MDU1931VRH

更新时间： 2024-11-19 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1072K
描述
Single N-channel Trench MOSFET 80V, 100A, 3.6m(ohm)

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MDU1931VRH 数据手册

MDU1931

Single N-channel Trench MOSFET 80V, 100A, 3.6mΩ

General Description

Features

The MDU1931 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDU1931 is suitable device for Synchronous

Rectification For Server and general purpose applications.



V_DS= 80V

I_D= 100A @V_GS= 10V

R_DS(ON)

< 3.6mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



PDFN56

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

T_C=25^oC (Package Limited)

T_C=100^oC

127.2

100.0

80.5

Continuous Drain Current ⁽¹⁾

I_D

T_A=25^oC⁽³⁾

20.5⁽³⁾

400.0

96.2

Pulsed Drain Current

Power Dissipation

I_DM

T_C=25^oC

T_C=100^oC

T_A=25^oC⁽³⁾

P_D

38.5

2.5⁽³⁾

Single Pulse Avalanche Energy ⁽²⁾

E_AS

242

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

1.3

Aug 2014. Rev. 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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