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MDU1532S PDF预览

MDU1532S

更新时间: 2024-11-19 01:17:11
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 1034K
描述
Single N-channel Trench MOSFET 30V

MDU1532S 数据手册

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MDU1532S  
Single N-channel Trench MOSFET 30V  
General Description  
Features  
The MDU1532S uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDU1532S is suitable device for DC/DC  
Converter and general purpose applications.  
VDS = 30V  
ID = 32A @VGS = 10V  
RDS(ON)  
< 4.2 mΩ @VGS = 10V  
< 5.3 mΩ @VGS = 4.5V  
100% UIL Tested  
100% Rg Tested  
SBD Built In  
D
D
D
D
D
D
D
D
D
S
S
S
G
G
S
S
S
G
S
PDFN56  
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
Rating  
30  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
±20  
105  
32  
V
TC=25oC (Silicon Limited)  
TC=25oC (Package Limited)  
TA=25oC  
Continuous Drain Current (1)  
ID  
29.5  
23.7  
128  
69  
A
TA=70oC  
Pulsed Drain Current  
Power Dissipation  
IDM  
PD  
TC=25oC  
TA=25oC  
W
5.5  
Single Pulse Avalanche Energy (2)  
EAS  
20  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
-55~150  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
22.7  
Unit  
oC/W  
RθJC  
1.8  
1
Aug. 2014. Ver. 0.1  
MagnaChip Semiconductor Ltd.  

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