Datasheet > MDU1535URH

MDU1535URH

更新时间： 2024-11-19 01:17:11

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1052K
描述
Single N-channel Trench MOSFET 30V

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中文翻译

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MDU1535URH 数据手册

MDU1535

Single N-channel Trench MOSFET 30V

General Description

Features

The MDU1535 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDU1535 is suitable device for DC/DC Converter

and general purpose applications.



V_DS= 30V

I_D= 32A @V_GS= 10V

R_DS(ON)

< 8.0 mΩ @V_GS= 10V

< 10.5 mΩ @V_GS= 4.5V

100% UIL Tested

100% Rg Tested



PDFN56

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

T_C=25^oC (Package Limited)

T_A=25^oC

Continuous Drain Current ⁽¹⁾

I_D

T_A=70^oC

Pulsed Drain Current

Power Dissipation

I_DM

P_D

120

T_C=25^oC

T_A=25^oC

5.5

Single Pulse Avalanche Energy ⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

22.7

Unit

^oC/W

R_θJC

3.4

May. 2014. Ver. 0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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