5秒后页面跳转
MDD26-14N1B PDF预览

MDD26-14N1B

更新时间: 2024-11-17 22:46:19
品牌 Logo 应用领域
IXYS 整流二极管局域网
页数 文件大小 规格书
3页 129K
描述
Diode Modules

MDD26-14N1B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-240AA
包装说明:R-XUFM-X3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.52
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.38 VJEDEC-95代码:TO-240AA
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:650 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:36 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1400 V子类别:Rectifier Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD26-14N1B 数据手册

 浏览型号MDD26-14N1B的Datasheet PDF文件第2页浏览型号MDD26-14N1B的Datasheet PDF文件第3页 
MDD 26  
IFRMS = 2x 60 A  
Diode Modules  
IFAVM = 2x 36 A  
VRRM = 800-1800 V  
3
1
2
3
TO-240 AA  
VRSM  
V
VRRM  
V
Type  
2
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MDD 26-08N1 B  
MDD 26-12N1 B  
MDD 26-14N1 B  
MDD 26-16N1 B  
MDD 26-18N1 B  
Features  
Symbol  
Test Conditions  
Maximum Ratings  
International standard package  
JEDEC TO-240 AA  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered, E 72873  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 100°C; 180° sine  
60  
36  
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
650  
760  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
580  
630  
A
A
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
2100  
2400  
A2s  
A2s  
Applications  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1700  
1900  
A2s  
A2s  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Battery DC power supplies  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
IISOL £ 1 mA  
Space and weight savings  
Simple mounting  
Improved temperature and power  
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4/22-35 Nm/lb.in.  
2.5-4/22-35 Nm/lb.in.  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
90  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM; VR = VRRM  
10 mA  
VF  
IF = 80 A; TVJ = 25°C  
1.38  
0.8  
6.1 mW  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
QS  
IRM  
TVJ = 125°C; IF = 25 A, -di/dt = 0.6 A/ms  
50  
6
mC  
A
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
1.0 K/W  
0.5 K/W  
1.2 K/W  
0.6 K/W  
other values  
see Fig. 6/7  
RthJK  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 3  

MDD26-14N1B 替代型号

型号 品牌 替代类型 描述 数据表
MDD26-18N1B IXYS

完全替代

Diode Modules
MDD26-12N1B IXYS

完全替代

Diode Modules
MDD95-12N1B IXYS

类似代替

Diode Modules

与MDD26-14N1B相关器件

型号 品牌 获取价格 描述 数据表
MDD26-16N1 IXYS

获取价格

Rectifier Diode, 36A, 1600V V(RRM),
MDD26-16N1B IXYS

获取价格

Diode Modules
MDD26-16N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD26-18N1B IXYS

获取价格

Diode Modules
MDD26-18N1B LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD2N60 MGCHIP

获取价格

N-Channel MOSFET 600V, 1.9A, 4.5ohm
MDD2N60RH MGCHIP

获取价格

N-Channel MOSFET 600V, 1.9A, 4.5ohm
MDD310 IXYS

获取价格

High Power Diode Modules
MDD310-06N1 IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 305A, 600V V(RRM), Silicon,
MDD310-08N1 IXYS

获取价格

High Power Diode Modules