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MDD2N60 PDF预览

MDD2N60

更新时间: 2024-11-06 01:22:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 968K
描述
N-Channel MOSFET 600V, 1.9A, 4.5ohm

MDD2N60 数据手册

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MDD2N60  
N-Channel MOSFET 600V, 1.9A, 4.5  
General Description  
Features  
These N-channel MOSFET are produced using advanced  
MagnaChip’s MOSFET Technology, which provides low on-  
state resistance, high switching performance and excellent  
quality.  
VDS = 600V  
ID = 1.9A  
RDS(ON) 4.5Ω  
@ VGS = 10V  
@ VGS = 10V  
Applications  
These devices are suitable device for SMPS, high Speed  
switching and general purpose applications.  
Power Supply  
PFC  
High Current, High Speed Switching  
G
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Symbol  
Rating  
600  
Unit  
V
Drain-Source Voltage  
VDSS  
VGSS  
Gate-Source Voltage  
±30  
V
TC=25oC  
TC=100oC  
1.9  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
Power Dissipation  
ID  
1.2  
A
IDM  
PD  
7.6  
A
TC=25oC  
42  
W
W/ oC  
Derate above 25 oC  
0.34  
4.2  
Repetitive Avalanche Energy(1)  
Peak Diode Recovery dv/dt(3)  
Single Pulse Avalanche Energy(4)  
EAR  
dv/dt  
EAS  
mJ  
V/ns  
mJ  
4.5  
115  
Junction and Storage Temperature Range  
* Id limited by maximum junction temperature  
TJ, Tstg  
-55~150  
oC  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient(1)  
Thermal Resistance, Junction-to-Case(1)  
Symbol  
RθJA  
Rating  
Unit  
110  
oC/W  
RθJC  
2.98  
1
Mar. 2014 Version 1.5  
MagnaChip Semiconductor Ltd.  

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