Datasheet > MDD2N60

MDD2N60

更新时间： 2024-09-16 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	968K
描述
N-Channel MOSFET 600V, 1.9A, 4.5ohm

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MDD2N60 数据手册

MDD2N60

N-Channel MOSFET 600V, 1.9A, 4.5Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 600V

I_D= 1.9A

R_DS(ON)≤ 4.5Ω

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

Rating

600

Unit

Drain-Source Voltage

V_DSS

V_GSS

Gate-Source Voltage

±30

T_C=25^oC

T_C=100^oC

1.9

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

1.2

I_DM

P_D

7.6

T_C=25^oC

W/ ^oC

Derate above 25 ^oC

0.34

4.2

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

V/ns

4.5

115

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

Unit

110

^oC/W

R_θJC

2.98

Mar. 2014 Version 1.5

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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