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MCR225-8FP_06 PDF预览

MCR225-8FP_06

更新时间: 2024-11-20 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅整流器
页数 文件大小 规格书
6页 175K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR225-8FP_06 数据手册

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MCR225−8FP, MCR225−10FP  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
Glass Passivated Junctions with Center Gate Fire for Greater Parameter  
Uniformity and Stability  
http://onsemi.com  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
(
)
ISOLATED SCRs  
25 AMPERES RMS  
600 thru 800 VOLTS  
300 A Surge Current Capability  
Insulated Package Simplifies Mounting  
Indicates UL Registered — File #E69369  
G
Device Marking: Logo, Device Type, e.g., MCR2258FP, Date Code  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive OffState Voltage  
V
DRM,  
Volts  
(T = 40 to +125°C, Sine Wave,  
J
V
RRM  
50 to 60 Hz, Gate Open)  
MCR2258FP  
600  
800  
MCR22510FP  
On-State RMS Current (T = +70°C)  
(180° Conduction Angles)  
I
25  
Amps  
Amps  
C
T(RMS)  
Peak Nonrepetitive Surge Current  
I
300  
TSM  
1
(1/2 Cycle, Sine Wave 60 Hz,  
2
T
C
= +70°C)  
3
2
2
Circuit Fusing (t = 8.3 ms)  
Forward Peak Gate Power  
I t  
375  
20  
A s  
ISOLATED TO220 Full Pack  
CASE 221C  
P
Watts  
Watt  
Amps  
Volts  
°C  
GM  
(T = +70°C, Pulse Width v 1.0 μs)  
C
STYLE 2  
Forward Average Gate Power  
(T = +70°C, t = 8.3 ms)  
C
P
0.5  
2.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
1
2
3
Forward Peak Gate Current  
(T = +70°C, Pulse Width v 1.0 μs)  
C
I
GM  
Anode  
Gate  
RMS Isolation Voltage (T = 25°C,  
V
1500  
A
(ISO)  
(
)
Relative Humidity p 20%)  
Operating Junction Temperature Range  
T
J
40 to  
+125  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Storage Temperature Range  
T
stg  
40 to  
°C  
+150  
MCR2258FP  
ISOLATED TO220FP 500/Box  
(1) V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MCR22510FP ISOLATED TO220FP 500/Box  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 3  
MCR225FP/D  

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