Datasheet > MCR225-8FP_06

MCR225-8FP_06

更新时间： 2024-11-09 04:16:23

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
6页	175K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR225-8FP_06 数据手册

MCR225−8FP, MCR225−10FP

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter

Uniformity and Stability

http://onsemi.com

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

(

)

ISOLATED SCRs

25 AMPERES RMS

600 thru 800 VOLTS

• 300 A Surge Current Capability

• Insulated Package Simplifies Mounting

•

Indicates UL Registered — File #E69369

• Device Marking: Logo, Device Type, e.g., MCR225−8FP, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off−State Voltage

DRM,

Volts

(T = −40 to +125°C, Sine Wave,

RRM

50 to 60 Hz, Gate Open)

MCR225−8FP

600

800

MCR225−10FP

On-State RMS Current (T = +70°C)

(180° Conduction Angles)

Amps

T(RMS)

Peak Non−repetitive Surge Current

300

TSM

(1/2 Cycle, Sine Wave 60 Hz,

= +70°C)

Circuit Fusing (t = 8.3 ms)

Forward Peak Gate Power

I t

375

A s

ISOLATED TO−220 Full Pack

CASE 221C

Watts

Watt

Amps

Volts

°C

(T = +70°C, Pulse Width v 1.0 μs)

STYLE 2

Forward Average Gate Power

(T = +70°C, t = 8.3 ms)

0.5

2.0

G(AV)

PIN ASSIGNMENT

Cathode

Forward Peak Gate Current

(T = +70°C, Pulse Width v 1.0 μs)

Anode

Gate

RMS Isolation Voltage (T = 25°C,

1500

(ISO)

(

)

Relative Humidity p 20%)

Operating Junction Temperature Range

−40 to

+125

ORDERING INFORMATION

Device

Package

Shipping

Storage Temperature Range

stg

−40 to

°C

+150

MCR225−8FP

ISOLATED TO220FP 500/Box

(1) V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

MCR225−10FP ISOLATED TO220FP 500/Box

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

August, 2006 − Rev. 3

MCR225FP/D

12 3 4 5 6

中文翻译

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与MCR225-8FP_06相关器件

型号	品牌	获取价格	描述	数据表
MCR225-9	NJSEMI	获取价格	THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225FP	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR22-6	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR22-6	ONSEMI	获取价格	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR22-6	NJSEMI	获取价格	Thyristor SCR 400V 15A 3-Pin TO-92 Box
MCR22-6_06	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6-5	MOTOROLA	获取价格	Silicon Controlled Rectifier, 1.5A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-226AA
MCR22-6G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6RLRA	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6RLRA	MOTOROLA	获取价格	Silicon Controlled Rectifier, 1.5A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO

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