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MCR22-6_06 PDF预览

MCR22-6_06

更新时间： 2024-11-20 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
7页 69K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR22-6_06 数据手册

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MCR22−6, MCR22−8  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
http://onsemi.com  
Features  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
• 150 A for 2 ms Safe Area  
• High dv/dt  
• Very Low Forward “On” Voltage at High Current  
• Low-Cost TO-226 (TO-92)  
• Pb−Free Packages are Available*  
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(R = IK, T = *40 to +110°C, Sine Wave,  
GK  
J
50 to 60 Hz, Gate Open)  
MCR22−6  
MCR22−8  
400  
600  
TO−92 (TO−226)  
CASE 029  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
A
A
T(RMS)  
C
STYLE 10  
1
Peak Non-repetitive Surge Current,  
I
TSM  
15  
@T = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)  
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.9  
0.5  
A s  
MARKING DIAGRAMS  
Forward Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 1.0 msec, T = 25°C)  
A
MCR  
22−x  
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
FGM  
(t = 8.3 msec, T = 25°C)  
AYWW G  
A
G
Forward Peak Gate Current  
I
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
Reverse Peak Gate Voltage  
V
5.0  
V
RGM  
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
MCR22−x = Device Code  
x = 6 or 8  
Operating Junction Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
@ Rated V  
and V  
RRM  
DRM  
A
Y
WW  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Storage Temperature Range  
T
stg  
THERMAL CHARACTERISTICS  
Pb−Free Package  
Characteristic  
Symbol  
Max  
50  
Unit  
°C/W  
°C/W  
°C  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
L
R
160  
+260  
q
PIN ASSIGNMENT  
Lead Solder Temperature  
(Lead Length q 1/16″ from case, 10 S Max)  
T
1
2
3
Cathode  
Gate  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply forzeroornegativegate voltage;however, positivegate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MCR22−6/D  
 
1234567

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