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MCR22-8RL1G PDF预览

MCR22-8RL1G

更新时间： 2024-11-20 04:08:11
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
7页 69K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR22-8RL1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TO-92包装说明：LEAD FREE, CASE 29-11, TO-226, 3 PIN
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.07
其他特性：SENSITIVE GATE标称电路换相断开时间：40 µs
配置：SINGLE关态电压最小值的临界上升速率：25 V/us
最大直流栅极触发电流：0.2 mA最大直流栅极触发电压：0.8 V
最大维持电流：5 mAJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e1
最大漏电流：0.2 mA通态非重复峰值电流：15 A
元件数量：1端子数量：3
最大通态电流：1500 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：1.5 A断态重复峰值电压：600 V
重复峰值反向电压：600 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：BOTTOM
处于峰值回流温度下的最长时间：40触发设备类型：SCR
Base Number Matches：1

MCR22-8RL1G 数据手册

 浏览型号MCR22-8RL1G的Datasheet PDF文件第2页浏览型号MCR22-8RL1G的Datasheet PDF文件第3页浏览型号MCR22-8RL1G的Datasheet PDF文件第4页浏览型号MCR22-8RL1G的Datasheet PDF文件第5页浏览型号MCR22-8RL1G的Datasheet PDF文件第6页浏览型号MCR22-8RL1G的Datasheet PDF文件第7页 
MCR22−6, MCR22−8  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
http://onsemi.com  
Features  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
• 150 A for 2 ms Safe Area  
• High dv/dt  
• Very Low Forward “On” Voltage at High Current  
• Low-Cost TO-226 (TO-92)  
• Pb−Free Packages are Available*  
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(R = IK, T = *40 to +110°C, Sine Wave,  
GK  
J
50 to 60 Hz, Gate Open)  
MCR22−6  
MCR22−8  
400  
600  
TO−92 (TO−226)  
CASE 029  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
A
A
T(RMS)  
C
STYLE 10  
1
Peak Non-repetitive Surge Current,  
I
TSM  
15  
@T = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)  
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.9  
0.5  
A s  
MARKING DIAGRAMS  
Forward Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 1.0 msec, T = 25°C)  
A
MCR  
22−x  
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
FGM  
(t = 8.3 msec, T = 25°C)  
AYWW G  
A
G
Forward Peak Gate Current  
I
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
Reverse Peak Gate Voltage  
V
5.0  
V
RGM  
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
MCR22−x = Device Code  
x = 6 or 8  
Operating Junction Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
@ Rated V  
and V  
RRM  
DRM  
A
Y
WW  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Storage Temperature Range  
T
stg  
THERMAL CHARACTERISTICS  
Pb−Free Package  
Characteristic  
Symbol  
Max  
50  
Unit  
°C/W  
°C/W  
°C  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
L
R
160  
+260  
q
PIN ASSIGNMENT  
Lead Solder Temperature  
(Lead Length q 1/16″ from case, 10 S Max)  
T
1
2
3
Cathode  
Gate  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply forzeroornegativegate voltage;however, positivegate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MCR22−6/D  
 
1234567

中文翻译

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MCR22-8RL1G 替代型号

型号 品牌 替代类型 描述 数据表
MCR22-8RL1 ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-8G ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-8 ONSEMI

完全替代

 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

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