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MCR22-6RLRA

更新时间： 2024-11-20 21:10:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅栅极
页数 文件大小 规格书
7页 64K
描述
Silicon Controlled Rectifier, 1.5A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN

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中文翻译

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MCR22-6RLRA 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, O-PBCY-W3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.61其他特性：SENSITIVE GATE
配置：SINGLE最大直流栅极触发电流：0.2 mA
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-W3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL认证状态：Not Qualified
最大均方根通态电流：1.5 A断态重复峰值电压：400 V
重复峰值反向电压：400 V表面贴装：NO
端子形式：WIRE端子位置：BOTTOM
触发设备类型：SCRBase Number Matches：1

MCR22-6RLRA 数据手册

 浏览型号MCR22-6RLRA的Datasheet PDF文件第2页浏览型号MCR22-6RLRA的Datasheet PDF文件第3页浏览型号MCR22-6RLRA的Datasheet PDF文件第4页浏览型号MCR22-6RLRA的Datasheet PDF文件第5页浏览型号MCR22-6RLRA的Datasheet PDF文件第6页浏览型号MCR22-6RLRA的Datasheet PDF文件第7页 
Preferred Device  
Reverse Blocking Thyristors  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
http://onsemi.com  
• 150 Amperes for 2 µs Safe Area  
• High dv/dt  
• Very Low Forward “On” Voltage at High Current  
• Low-Cost TO-226AA (TO-92)  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
• Device Marking: Device Type, e.g., MCR22–6, Date Code  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
A
K
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(R  
= IK, T  
=
40 to +110°C,  
V
RRM  
GK  
J
Sine Wave, 50 to 60 Hz, Gate Open)  
MCR22–6  
MCR22–8  
400  
600  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
Amps  
Amps  
T(RMS)  
C
Peak Non-repetitive Surge Current,  
I
15  
1
TSM  
2
T
A
= 25°C  
3
(1/2 Cycle, Sine Wave, 60 Hz)  
Circuit Fusing Considerations (t = 8.3 ms)  
Forward Peak Gate Power  
2
2
I t  
0.9  
0.5  
A s  
TO–92 (TO–226AA)  
CASE 029  
P
Watt  
Watt  
Amp  
Volts  
°C  
GM  
STYLE 10  
(Pulse Width ≤ 1.0 sec, T = 25°C)  
A
Forward Average Gate Power  
P
0.1  
0.2  
5.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
(t = 8.3 msec, T = 25°C)  
A
1
2
3
Forward Peak Gate Current  
I
FGM  
Gate  
(Pulse Width ≤ 1.0 µs, T = 25°C)  
A
Anode  
Reverse Peak Gate Voltage  
V
RGM  
(Pulse Width ≤ 1.0 µs, T = 25°C)  
A
Operating Junction Temperature Range  
T
J
–40 to  
+110  
ORDERING INFORMATION  
@ Rated V  
RRM  
and V  
DRM  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 549 of this data sheet.  
Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
(1) V  
andV  
foralltypescanbeappliedonacontinuousbasis.Ratings  
RRM  
DRM  
apply for zero or negative gate voltage; however, positive gate voltage  
shall not be applied concurrent with negative potential on the anode.  
Blocking voltages shall not be tested with a constant current source such  
that the voltage ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 2000  
543  
Publication Order Number:  
May, 2000 – Rev. 3  
MCR22–6/D  
1234567

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