5秒后页面跳转
捷配首页

Datasheet > 触发装置 > 可控硅整流器> MCR22-8RL1
MCR22-8RL1 PDF预览

MCR22-8RL1

更新时间： 2024-11-20 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
7页 69K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

阅读下载

中文翻译

获取价格

MCR22-8RL1 技术参数

是否无铅：含铅生命周期：End Of Life
零件包装代码：TO-92包装说明：CASE 29-11, TO-226, 3 PIN
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.08
Is Samacsys：N其他特性：SENSITIVE GATE
标称电路换相断开时间：40 µs配置：SINGLE
关态电压最小值的临界上升速率：25 V/us最大直流栅极触发电流：0.2 mA
最大直流栅极触发电压：0.8 V最大维持电流：5 mA
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
JESD-609代码：e1最大漏电流：0.2 mA
通态非重复峰值电流：15 A元件数量：1
端子数量：3最大通态电流：1500 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大均方根通态电流：1.5 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
触发设备类型：SCRBase Number Matches：1

MCR22-8RL1 数据手册

 浏览型号MCR22-8RL1的Datasheet PDF文件第2页浏览型号MCR22-8RL1的Datasheet PDF文件第3页浏览型号MCR22-8RL1的Datasheet PDF文件第4页浏览型号MCR22-8RL1的Datasheet PDF文件第5页浏览型号MCR22-8RL1的Datasheet PDF文件第6页浏览型号MCR22-8RL1的Datasheet PDF文件第7页 
MCR22−6, MCR22−8  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
http://onsemi.com  
Features  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
• 150 A for 2 ms Safe Area  
• High dv/dt  
• Very Low Forward “On” Voltage at High Current  
• Low-Cost TO-226 (TO-92)  
• Pb−Free Packages are Available*  
G
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(R = IK, T = *40 to +110°C, Sine Wave,  
GK  
J
50 to 60 Hz, Gate Open)  
MCR22−6  
MCR22−8  
400  
600  
TO−92 (TO−226)  
CASE 029  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
A
A
T(RMS)  
C
STYLE 10  
1
Peak Non-repetitive Surge Current,  
I
TSM  
15  
@T = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)  
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.9  
0.5  
A s  
MARKING DIAGRAMS  
Forward Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 1.0 msec, T = 25°C)  
A
MCR  
22−x  
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
FGM  
(t = 8.3 msec, T = 25°C)  
AYWW G  
A
G
Forward Peak Gate Current  
I
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
Reverse Peak Gate Voltage  
V
5.0  
V
RGM  
(Pulse Width ≤ 1.0 ms, T = 25°C)  
A
MCR22−x = Device Code  
x = 6 or 8  
Operating Junction Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
@ Rated V  
and V  
RRM  
DRM  
A
Y
WW  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Storage Temperature Range  
T
stg  
THERMAL CHARACTERISTICS  
Pb−Free Package  
Characteristic  
Symbol  
Max  
50  
Unit  
°C/W  
°C/W  
°C  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
L
R
160  
+260  
q
PIN ASSIGNMENT  
Lead Solder Temperature  
(Lead Length q 1/16″ from case, 10 S Max)  
T
1
2
3
Cathode  
Gate  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply forzeroornegativegate voltage;however, positivegate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MCR22−6/D  
 
1234567

中文翻译

下载PDF

MCR22-8RL1 替代型号

型号 品牌 替代类型 描述 数据表
MCR22-8G ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-8RL1G ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
TCR22-8 LITTELFUSE

类似代替

 Sensitive SCRs (0.8 A to 10 A)

与MCR22-8RL1相关器件

型号 品牌 获取价格 描述 数据表
MCR22-8RL1G ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-8ZL1 ONSEMI

获取价格

 		1.5A, 600V, SCR, TO-92, CASE 029-11, TO-226AA, 3 PIN
MCR22-8ZL1 MOTOROLA

获取价格

 		1.5A, 600V, SCR, TO-92, TO-226AA, 3 PIN
MCR230 MOTOROLA

获取价格

 		SILICON CONTROLLED RECTIFIERS
MCR230 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk
MCR2304-1 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk
MCR2304-4 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk
MCR2304-6 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk
MCR2304-7 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk
MCR2305 NJSEMI

获取价格

 		Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220AB Bulk

与MCR22-8RL1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证