MCR225-10FP

更新时间： 2024-11-08 22:46:19

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅
页数	文件大小	规格书
8页	90K
描述
ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS

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中文翻译

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数据手册

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MCR225-10FP 数据手册

Preferred Device

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter

Uniformity and Stability

http://onsemi.com

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

(

)

ISOLATED SCRs

25 AMPERES RMS

600 thru 800 VOLTS

• 300 A Surge Current Capability

• Insulated Package Simplifies Mounting

•

Indicates UL Registered — File #E69369

• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off–State Voltage

Volts

DRM,

(T = –40 to +125°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR225–8FP

RRM

600

800

MCR225–10FP

On-State RMS Current (T = +70°C)

(180° Conduction Angles)

Amps

T(RMS)

Peak Non–repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

300

TSM

= +70°C)

Circuit Fusing (t = 8.3 ms)

I t

375

A s

ISOLATED TO–220 Full Pack

CASE 221C

Forward Peak Gate Power

(T = +70°C, Pulse Width

Watts

Watt

Amps

Volts

°C

1.0 µs)

STYLE 2

Forward Average Gate Power

(T = +70°C, t = 8.3 ms)

0.5

2.0

G(AV)

PIN ASSIGNMENT

Cathode

Forward Peak Gate Current

(T = +70°C, Pulse Width

1.0 µs)

Anode

Gate

RMS Isolation Voltage (T = 25°C,

1500

20%)

(ISO)

(

)

Relative Humidity

Operating Junction Temperature Range

Storage Temperature Range

–40 to

+125

ORDERING INFORMATION

Device

Package

Shipping

–40 to

+150

°C

stg

MCR225–8FP

ISOLATED TO220FP 500/Box

(1) V

DRM

and V for all types can be applied on a continuous basis. Ratings

RRM

MCR225–10FP ISOLATED TO220FP 500/Box

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 1999

Publication Order Number:

February, 2000 – Rev. 2

MCR225FP/D

12 3 4 5 6 7 8

中文翻译

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与MCR225-10FP相关器件

型号	品牌	获取价格	描述	数据表
MCR225-12	NJSEMI	获取价格	THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-2FP	MOTOROLA	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element
MCR225-5	NJSEMI	获取价格	THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-7	NJSEMI	获取价格	THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-8FP	ONSEMI	获取价格	ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS
MCR225-8FP	MOTOROLA	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220FP,
MCR225-8FP_06	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR225-9	NJSEMI	获取价格	THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225FP	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR22-6	MOTOROLA	获取价格	Silicon Controlled Rectifiers

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