5秒后页面跳转
MCR225-10FP PDF预览

MCR225-10FP

更新时间: 2024-11-19 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅
页数 文件大小 规格书
8页 90K
描述
ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS

MCR225-10FP 数据手册

 浏览型号MCR225-10FP的Datasheet PDF文件第2页浏览型号MCR225-10FP的Datasheet PDF文件第3页浏览型号MCR225-10FP的Datasheet PDF文件第4页浏览型号MCR225-10FP的Datasheet PDF文件第5页浏览型号MCR225-10FP的Datasheet PDF文件第6页浏览型号MCR225-10FP的Datasheet PDF文件第7页 
Preferred Device  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
Glass Passivated Junctions with Center Gate Fire for Greater Parameter  
Uniformity and Stability  
http://onsemi.com  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
(
)
ISOLATED SCRs  
25 AMPERES RMS  
600 thru 800 VOLTS  
300 A Surge Current Capability  
Insulated Package Simplifies Mounting  
Indicates UL Registered — File #E69369  
G
Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to +125°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
MCR225–8FP  
V
RRM  
J
600  
800  
MCR225–10FP  
On-State RMS Current (T = +70°C)  
(180° Conduction Angles)  
I
25  
Amps  
Amps  
C
T(RMS)  
Peak Non–repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz,  
I
300  
TSM  
1
2
T
C
= +70°C)  
3
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
375  
20  
A s  
ISOLATED TO–220 Full Pack  
CASE 221C  
Forward Peak Gate Power  
(T = +70°C, Pulse Width  
C
P
Watts  
Watt  
Amps  
Volts  
°C  
GM  
1.0 µs)  
STYLE 2  
Forward Average Gate Power  
(T = +70°C, t = 8.3 ms)  
C
P
0.5  
2.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
1
2
3
Forward Peak Gate Current  
(T = +70°C, Pulse Width  
C
I
GM  
1.0 µs)  
Anode  
Gate  
RMS Isolation Voltage (T = 25°C,  
V
1500  
A
20%)  
(ISO)  
(
)
Relative Humidity  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to  
+125  
ORDERING INFORMATION  
Device  
Package  
Shipping  
T
–40 to  
+150  
°C  
stg  
MCR225–8FP  
ISOLATED TO220FP 500/Box  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
MCR225–10FP ISOLATED TO220FP 500/Box  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 2  
MCR225FP/D  

与MCR225-10FP相关器件

型号 品牌 获取价格 描述 数据表
MCR225-12 NJSEMI

获取价格

THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-2FP MOTOROLA

获取价格

Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element
MCR225-5 NJSEMI

获取价格

THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-7 NJSEMI

获取价格

THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225-8FP ONSEMI

获取价格

ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS
MCR225-8FP MOTOROLA

获取价格

Silicon Controlled Rectifier, 25A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220FP,
MCR225-8FP_06 ONSEMI

获取价格

Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR225-9 NJSEMI

获取价格

THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225FP MOTOROLA

获取价格

Silicon Controlled Rectifiers
MCR22-6 MOTOROLA

获取价格

Silicon Controlled Rectifiers