5秒后页面跳转
捷配首页

Datasheet > 触发装置 > 可控硅整流器> MCR225-8FP
MCR225-8FP PDF预览

MCR225-8FP

更新时间： 2024-11-19 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅整流器
页数 文件大小 规格书
8页 90K
描述
ISOLATED SCRs 25 AMPERES RMS 600 thru 800 VOLTS

阅读下载

中文翻译

获取价格

MCR225-8FP 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SFM包装说明：ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.23
Is Samacsys：N外壳连接：ISOLATED
标称电路换相断开时间：15 µs配置：SINGLE
最大直流栅极触发电流：40 mA最大直流栅极触发电压：1.5 V
最大维持电流：40 mAJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大漏电流：2 mA
通态非重复峰值电流：300 A元件数量：1
端子数量：3最大通态电流：25000 A
最高工作温度：125 °C最低工作温度：-45 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：25 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

MCR225-8FP 数据手册

 浏览型号MCR225-8FP的Datasheet PDF文件第2页浏览型号MCR225-8FP的Datasheet PDF文件第3页浏览型号MCR225-8FP的Datasheet PDF文件第4页浏览型号MCR225-8FP的Datasheet PDF文件第5页浏览型号MCR225-8FP的Datasheet PDF文件第6页浏览型号MCR225-8FP的Datasheet PDF文件第7页 
Preferred Device  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter  
Uniformity and Stability  
http://onsemi.com  
• Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Blocking Voltage to 800 Volts  
(
)
ISOLATED SCRs  
25 AMPERES RMS  
600 thru 800 VOLTS  
• 300 A Surge Current Capability  
• Insulated Package Simplifies Mounting  
•
Indicates UL Registered — File #E69369  
G
• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code  
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
Volts  
DRM,  
(T = –40 to +125°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
MCR225–8FP  
V
RRM  
J
600  
800  
MCR225–10FP  
On-State RMS Current (T = +70°C)  
(180° Conduction Angles)  
I
25  
Amps  
Amps  
C
T(RMS)  
Peak Non–repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz,  
I
300  
TSM  
1
2
T
C
= +70°C)  
3
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
375  
20  
A s  
ISOLATED TO–220 Full Pack  
CASE 221C  
Forward Peak Gate Power  
(T = +70°C, Pulse Width  
C
P
Watts  
Watt  
Amps  
Volts  
°C  
GM  
1.0 µs)  
STYLE 2  
Forward Average Gate Power  
(T = +70°C, t = 8.3 ms)  
C
P
0.5  
2.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
1
2
3
Forward Peak Gate Current  
(T = +70°C, Pulse Width  
C
I
GM  
1.0 µs)  
Anode  
Gate  
RMS Isolation Voltage (T = 25°C,  
V
1500  
A
20%)  
(ISO)  
(
)
Relative Humidity  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to  
+125  
ORDERING INFORMATION  
Device  
Package  
Shipping  
T
–40 to  
+150  
°C  
stg  
MCR225–8FP  
ISOLATED TO220FP 500/Box  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
MCR225–10FP ISOLATED TO220FP 500/Box  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
February, 2000 – Rev. 2  
MCR225FP/D  
12345678

中文翻译

下载PDF

与MCR225-8FP相关器件

型号 品牌 获取价格 描述 数据表
MCR225-8FP_06 ONSEMI

获取价格

 		Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR225-9 NJSEMI

获取价格

 		THYRISTORS SILICON CONTROLLED RECTIFIERS
MCR225FP MOTOROLA

获取价格

 		Silicon Controlled Rectifiers
MCR22-6 MOTOROLA

获取价格

 		Silicon Controlled Rectifiers
MCR22-6 ONSEMI

获取价格

 		SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR22-6 NJSEMI

获取价格

 		Thyristor SCR 400V 15A 3-Pin TO-92 Box
MCR22-6_06 ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6-5 MOTOROLA

获取价格

 		Silicon Controlled Rectifier, 1.5A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-226AA
MCR22-6G ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR22-6RLRA ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

与MCR225-8FP相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证