MCMA110PD1800TB
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
1900
1800
100
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1800 V
VR/D =1800 V
IT = 110 A
IT = 220 A
IT = 110 A
IT = 220 A
TC = 85°C
180° sine
µA
reverse current, drain current
10 mA
forward voltage drop
1.24
V
V
V
V
A
A
V
VT
1.52
1.21
1.57
110
TVJ
=
°C
125
average forward current
RMS forward current
TVJ = 140°C
TVJ = 140°C
ITAV
IT(RMS)
VT0
170
0.85
threshold voltage
for power loss calculation only
slope resistance
3.3 mΩ
0.3 K/W
K/W
rT
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.2
TC = 25°C
TVJ = 45°C
VR = 0 V
380
1.90
2.05
1.62
1.75
W
kA
kA
kA
kA
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
ITSM
TVJ = 140°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
18.1 kA²s
17.5 kA²s
13.0 kA²s
12.7 kA²s
pF
TVJ = 140°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 140°C
95
CJ
10
5
W
W
W
PGM
max. gate power dissipation
tP = 300 µs
0.5
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT = 330 A
150 A/µs
(di/dt)cr
0.45
tP = 200 µs;diG /dt =
A/µs;
IG = 0.45A; V = ⅔ VDRM
V = ⅔ VDRM
non-repet., IT = 110 A
TVJ = 140°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 140°C
1.5
1.6
V
V
gate trigger current
VD = 6 V
150 mA
200 mA
IGT
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0.2
V
VGD
IGD
IL
10 mA
tp = 10 µs
TVJ = 25°C
200 mA
IG = 0.45A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
holding current
TVJ = 25°C
TVJ = 25°C
200 mA
IH
gate controlled delay time
VD = ½ V
2
µs
tgd
DRM
IG = 0.45A; diG/dt = 0.45 A/µs
turn-off time
VR = 100 V; IT = 110A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs µs
185
µs
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191205c
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