Datasheet > MCM69R618ZP5

MCM69R618ZP5

更新时间： 2024-02-03 22:21:06

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		信息通信管理静态存储器内存集成电路
页数	文件大小	规格书
20页	141K
描述
Late-Write SRAM, 64KX18, 2.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119

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技术参数
数据手册

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MCM69R618ZP5 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA,	针数：	119
Reach Compliance Code：	unknown	风险等级：	5.8
最长访问时间：	2.5 ns	JESD-30 代码：	R-PBGA-B119
长度：	22 mm	内存密度：	1179648 bit
内存集成电路类型：	LATE-WRITE SRAM	内存宽度：	18
功能数量：	1	端子数量：	119
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64KX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	2.4 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3.15 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	BICMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
宽度：	14 mm	Base Number Matches：	1

MCM69R618ZP5 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM69R536/D

MCM69R536

MCM69R618

Advance Information

1M Late Write HSTL

The MCM69R536/618 is a 1 megabit synchronous late write fast static RAM

designed to provide high performance in secondary cache, ATM switch,

Telecom, and other high speed memory applications. The MCM69R618

organized as 64K words by 18 bits, and the MCM69R536 organized as 32K

words by 36 bits wide are fabricated in Motorola’s high performance silicon gate

BiCMOS technology.

The differential CK clock inputs control the timing of read/write operations of

the RAM. At the rising edge of the CK clock all addresses, write enables, and

synchronous selects are registered. An internal buffer and special logic enable

the memory to accept write data on the rising edge of the CK clock a cycle after

address and control signals. Read data is driven on the rising edge of the CK

clock also.

ZP PACKAGE

PBGA

CASE 999–01

TheRAMusesHSTLinputsandoutputs. Theadjustableinputtrip–point(V

)

ref

and output voltage (V

) gives the system designer greater flexibility in

DDQ

optimizing system performance.

The synchronous write and byte enables allow writing to individual bytes or the

entire word.

The impedance of the output buffers is programmable allowing the outputs to

match the impedance of the circuit traces which reduces signal reflections.

•

Byte Write Control

Single 3.3 V + 10%, – 5% Operation

HSTL – I/O (JEDEC Standard JESD8–6 Class 1 Compatible)

HSTL – User Selectable Input Trip–Point

HSTL – Compatible Programmable Impedance Output Drivers

Asynchronous Output Enable

Boundary Scan (JTAG) IEEE 1149.1 Compatible

Differential Clock Inputs

Optional x18 or x36 organization

MCM69R536/618–5 = 5 ns

MCM69R536/618–6 = 6 ns

MCM69R536/618–7 = 7 ns

MCM69R536/618–8 = 8 ns

•

119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array

(PBGA) Package

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1

8/15/97

Motorola, Inc. 1997

MOTOROLA FAST SRAM

MCM69R536•MCM69R618

12 3 4 5 6 7...20

中文翻译

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与MCM69R618ZP5相关器件

型号	品牌	获取价格	描述	数据表
MCM69R618ZP5R	MOTOROLA	获取价格	Late-Write SRAM, 64KX18, 2.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-1
MCM69R618ZP6	MOTOROLA	获取价格	Late-Write SRAM, 64KX18, 3ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R618ZP6R	MOTOROLA	获取价格	64KX18 LATE-WRITE SRAM, 3ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R618ZP7	MOTOROLA	获取价格	64KX18 LATE-WRITE SRAM, 3.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R618ZP7R	MOTOROLA	获取价格	64KX18 LATE-WRITE SRAM, 3.5ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R618ZP8	NXP	获取价格	64KX18 LATE-WRITE SRAM, 4ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R619ZP5R	MOTOROLA	获取价格	Cache SRAM, 64KX18, 2.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R619ZP6	MOTOROLA	获取价格	64KX18 CACHE SRAM, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R619ZP6R	MOTOROLA	获取价格	Cache SRAM, 64KX18, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
MCM69R619ZP7	MOTOROLA	获取价格	Cache SRAM, 64KX18, 3.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119

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