Datasheet > MCM63D736TQ83

MCM63D736TQ83

更新时间： 2024-02-09 17:01:05

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		内存集成电路静态存储器
页数	文件大小	规格书
16页	450K
描述
128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM

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MCM63D736TQ83 技术参数

生命周期：	Obsolete	包装说明：	LFQFP,
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	6 ns	JESD-30 代码：	S-PQFP-G176
长度：	24 mm	内存密度：	4718592 bit
内存集成电路类型：	DUAL-PORT SRAM	内存宽度：	36
功能数量：	1	端子数量：	176
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	128KX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LFQFP
封装形状：	SQUARE	封装形式：	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	QUAD
宽度：	24 mm	Base Number Matches：	1

MCM63D736TQ83 数据手册

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by MCM63D736/D

Freescale Semiconductor

MCM63D736

128K x 36 Bit Synchronous

Dual I/O, Dual Address SRAM

The MCM63D736 is a 4M–bit static random access memory, organized as

128K words of 36 bits. It features common data input and data output buffers and

incorporates input and output registers on–board with high speed SRAM.

The MCM63D736 allows the user to concurrently perform reads, writes, or

pass–throughcyclesincombinationonthetwodataports. Thetwoaddressports

(AX, AY) determine the read or write locations for their respective data ports

(DQX, DQY).

The synchronous design allows for precise cycle control with the use of an

external single clock (K). All signal pins except output enables (GX, GY) are

registered on the rising edge of clock (K).

TQ PACKAGE

176 LEAD TQFP

CASE 1101–01

The pass–through feature allows data to be passed from one port to the other,

in either direction. The PTX input must be asserted to pass data from port X to

port Y. The PTY will likewise pass data from port Y to port X. A pass–through

operation takes precedence over a read operation.

For the case when AX and AY are the same, certain protocols are followed. If

both ports are read, the reads occur normally. If one port is written and the other

is read, the read from the array will occur before the data is written. If both ports

are written, only the data on DQY will be written to the array.

•

Single 3.3 V ±5% Power Supply

133 MHz Maximum Clock Frequency

Throughput of 4.8 Gigabits/Second

Single Clock Operation

Self–Timed Write

Two Bi–Directional Data Buses

Can be Configured as Separate I/O

Pass–Through Feature

Asynchronous Output Enables (GX, GY)

LVTTL Compatible I/O

Concurrent Reads and Writes

176–Pin TQFP Package

Suggested Applications

— ATM

— Ethernet Switches — Routers

— Cellular Base Stations

— Cell/Frame Buffers — SNA Switches

— Shared Memory — RAID Systems

REV 4

7/6/00

MCM63D736

For More Information On This Product,

Go to: www.freescale.com

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与MCM63D736TQ83相关器件

型号	品牌	获取价格	描述	数据表
MCM63D836VF100	MOTOROLA	获取价格	Multi-Port SRAM, 256KX36, 5ns, CMOS, PBGA209
M-CM63F	COOPER	获取价格	Circuit Protection Solutions Low Voltage Fuse Links Catalogue
MCM63F733A	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ10	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ10	NXP	获取价格	128KX32 CACHE SRAM, 10ns, PQFP100, TQFP-100
MCM63F733ATQ10R	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ10R	NXP	获取价格	128KX32 CACHE SRAM, 10ns, PQFP100, TQFP-100
MCM63F733ATQ11	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ11	NXP	获取价格	128KX32 CACHE SRAM, 11ns, PQFP100, TQFP-100
MCM63F733ATQ11R	MOTOROLA	获取价格	128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

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