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MCD500-18IO1 PDF预览

MCD500-18IO1

更新时间: 2024-09-16 15:41:07
品牌 Logo 应用领域
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页数 文件大小 规格书
11页 447K
描述
Silicon Controlled Rectifier, 1294A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, MODULE-5

MCD500-18IO1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MODULE
包装说明:MODULE-5针数:5
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.72外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最大直流栅极触发电流:300 mA
JESD-30 代码:R-XXFM-X5元件数量:1
端子数量:5封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1294 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V表面贴装:NO
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

MCD500-18IO1 数据手册

 浏览型号MCD500-18IO1的Datasheet PDF文件第2页浏览型号MCD500-18IO1的Datasheet PDF文件第3页浏览型号MCD500-18IO1的Datasheet PDF文件第4页浏览型号MCD500-18IO1的Datasheet PDF文件第5页浏览型号MCD500-18IO1的Datasheet PDF文件第6页浏览型号MCD500-18IO1的Datasheet PDF文件第7页 
Date: 17.03.2005  
IXYS  
Data Sheet Issue: 2  
Thyristor/Diode Modules M## 500  
Absolute Maximum Ratings  
VRRM  
VDRM  
[V]  
MCC  
MCD  
MDC  
MCA  
MCK  
MCDA  
MDCA  
1200  
1400  
1600  
1800  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
500-12io1  
500-14io1  
500-16io1  
500-18io1  
MAXIMUM  
LIMITS  
1200-1800  
1200-1800  
1200-1800  
1300-1900  
VOLTAGE RATINGS  
UNITS  
VDRM  
Repetitive peak off-state voltage 1)  
Non-repetitive peak off-state voltage 1)  
Repetitive peak reverse voltage 1)  
Non-repetitive peak reverse voltage 1)  
V
V
V
V
VDSM  
VRRM  
VRSM  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, TC = 89°C 2)  
Maximum average on-state current. TC = 85°C 2)  
500  
A
A
545  
Maximum average on-state current. TC = 100°C 2)  
376  
A
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2)  
1294  
1029  
16.5  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, TC = 55°C  
A
3)  
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM  
Peak non-repetitive surge tp = 10 ms, VRM 10V 3)  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
18.2  
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM  
1.36×106  
1.66×106  
150  
3)  
I2t  
I2t capacity for fusing tp = 10 ms, VRM 10 V 3)  
Critical rate of rise of on-state current (repetitive) 4)  
(di/dt)cr  
Critical rate of rise of on-state current (non-repetitive) 4)  
Peak reverse gate voltage  
300  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
4
W
Peak forward gate power  
Isolation Voltage 5)  
30  
W
VISOL  
TVj op  
Tstg  
3500  
-40 to +125  
-40 to +150  
V
Operating temperature range  
Storage temperature range  
°C  
°C  
Notes:  
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.  
2) Single phase; 50 Hz, 180° half-sinewave.  
3) Half-sinewave, 125°C Tvj initial.  
4) VD = 67% VDRM, IFG = 2 A, tr 0.5µs, TC = 125°C.  
5) AC RMS voltage, 50 Hz, 1min test  
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2  
Page 1 of 11  
March, 2005  

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