5秒后页面跳转
MCD56-14IO1B PDF预览

MCD56-14IO1B

更新时间: 2024-11-04 22:49:03
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
4页 158K
描述
Thyristor Modules /Diode Modules

MCD56-14IO1B 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-240AA包装说明:FLANGE MOUNT, R-XUFM-X5
针数:5Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.68
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最大直流栅极触发电流:100 mA
最大直流栅极触发电压:1.6 V快速连接描述:G-GR
螺丝端子的描述:A-K-AK最大维持电流:200 mA
JEDEC-95代码:TO-240AAJESD-30 代码:R-XUFM-X5
最大漏电流:5 mA通态非重复峰值电流:1620 A
元件数量:1端子数量:5
最大通态电流:60000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:100 A断态重复峰值电压:1400 V
重复峰值反向电压:1400 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

MCD56-14IO1B 数据手册

 浏览型号MCD56-14IO1B的Datasheet PDF文件第2页浏览型号MCD56-14IO1B的Datasheet PDF文件第3页浏览型号MCD56-14IO1B的Datasheet PDF文件第4页 
MCC 56  
MCD 56  
ITRMS = 2x100 A  
ITAVM = 2x64 A  
VRRM = 800-1800 V  
Thyristor Modules  
Thyristor/Diode Modules  
6
TO-240 AA  
3
7
4
2
5
1
VRSM  
VDSM  
VRRM  
VDRM  
Type  
V
V
Version  
1 B  
8 B  
Version  
1 B  
8 B  
900  
1300  
1500  
1700  
1900  
800  
1200  
1400  
1600  
1800  
MCC 56-08 io1 B / io8 B  
MCC 56-12 io1 B / io8 B  
MCC 56-14 io1 B / io8 B  
MCC 56-16 io1 B / io8 B  
MCC 56-18 io1 B / io8 B  
MCD 56-08 io1 B / io8 B  
MCD 56-12 io1 B / io8 B  
MCD 56-14 io1 B / io8 B  
MCD 56-16 io1 B / io8 B  
MCD 56-18 io1 B / io8 B  
3
3
6 7 1  
5 4 2  
Symbol  
Conditions  
Maximum Ratings  
ITRMS, IFRMS  
ITAVM, IFAVM  
TVJ = TVJM  
TC = 83°C; 180° sine  
TC = 85°C; 180° sine  
100  
64  
60  
A
A
A
MCC  
Version 1 B  
1
5 4 2  
ITSM, IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1500  
1600  
A
A
MCD  
Version 1 B  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1350  
1450  
A
A
i2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11 200  
10 750  
A2s  
A2s  
3
3
6
1
1
5
5
2
2
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9100  
8830  
A2s  
A2s  
MCC  
Version 8 B  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 150 A  
150  
A/µs  
f =50 Hz, tP = 200 µs  
VD = 2/3 VDRM  
MCD  
Version 8 B  
IG = 0.45 A  
diG/dt = 0.45 A/µs  
non repetitive, IT = ITAVM  
VDR = 2/3 VDRM  
500  
A/µs  
V/µs  
(dv/dt)cr  
PGM  
TVJ = TVJM  
;
1000  
Features  
RGK = ; method 1 (linear voltage rise)  
• International standard package,  
JEDEC TO-240 AA  
• Direct copper bonded Al2O3 -ceramic  
base plate  
• Planar passivated chips  
• Isolation voltage 3600 V~  
• UL registered, E 72873  
TVJ = TVJM  
IT = ITAVM  
;
tP = 30 µs  
tP = 300 µs  
10  
5
W
W
;
PGAV  
VRGM  
0.5  
10  
W
V
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
• Gate-cathode twin pins for version 1B  
Applications  
VISOL  
50/60 Hz, RMS;  
IISOL 1 mA;  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
• DC motor control  
• Softstart AC motor controller  
• Light, heat and temperature control  
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35 Nm/lb.in.  
2.5-4.0/22-35 Nm/lb.in.  
Weight  
Typical including screws  
90  
g
Advantages  
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
• Space and weight savings  
• Simple mounting with two screws  
• Improvedtemperatureandpowercycling  
• Reduced protection circuits  
© 2004 IXYS All rights reserved  
1 - 4  

与MCD56-14IO1B相关器件

型号 品牌 获取价格 描述 数据表
MCD56-14IO8 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 100000mA I(T), 1400V V(RRM),
MCD56-14IO8B IXYS

获取价格

Thyristor Modules /Diode Modules
MCD56-14IO8B LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD56-16IO1 IXYS

获取价格

Thyristor Modules /Diode Modules
MCD56-16IO1 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 100A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, TO-240A
MCD56-16IO1B IXYS

获取价格

Thyristor Modules /Diode Modules
MCD56-16IO1B LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。
MCD56-16IO8 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 100000mA I(T), 1600V V(RRM),
MCD56-16IO8B IXYS

获取价格

Thyristor Modules /Diode Modules
MCD56-16IO8B LITTELFUSE

获取价格

晶闸管二极管模块产品组合提供多种封装和高达2200V的击穿电压。